CZTSe/Cd_(1-x)Zn_xS界面能带结构研究  

Study on Band Structure of CZTSe/Cd_(1-x)Zn_xS Interface

作　　者：张超[1] 李微[2] 邓朝文[1] 杨立[1] 

机构地区：[1]中国电子科技集团公司第十八研究所,天津300384 [2]天津理工大学,天津300384

出　　处：《人工晶体学报》2016年第8期2061-2066,共6页Journal of Synthetic Crystals

摘　　要：严重的开路电压损耗是限制铜锌锡硫(硒)薄膜太阳电池性能提升的关键问题,其吸收层和缓冲层界面的能带结构有待进一步优化。针对此问题,本文对CZTSe/Cd_(1-x)Zn_xS界面的能带结构进行了研究。首先,模拟计算了化学水浴法制备Cd_(1-x)Zn_xS薄膜所需的溶液体系条件,通过椭偏仪和SEM测试结果分析了不同Cd/Zn比例的Cd_(1-x)Zn_xS缓冲层形貌、光学特性以及禁带宽度。然后,对CZTSe/Cd_(1-x)Zn_xS界面进行了XPS测试分析,发现CZTSe/Cd_(0.9)Zn_(0.1)S界面最为匹配,其导带失调值约为0.3 eV。最后对电池器件进行了制备与测试,得到的CZTSe/Cd_(0.9)Zn_(0.1)S结构的太阳电池比CZTSe/CdS结构具有更高的开路电压,达到了394 mV,转换效率达到了5.78%。The key issue that has limited the performance of Cu2ZnSnS（ Se）4 thin film solar cells is the large open circuit voltage deficit, likely resulting from a non-optimal conduction band alignment between the absorber and the buffer layer. In this work, the band alignment at CZTSe/Cd1-xZnxS interface was studied. Firstly, the solution system for chemical bath deposition of Cd1-xZnxSthin film was simulated and designed. The morphology, optical characteristics and band gap of the Cd1-xZnxS layers with different Cd/Zn ratios were analyzed by SEM and ellipsometry, respectively. The band structure at CZTSe/Cd1-xZnxS interface was researched by XPS test. The CZTSe/Cd0 .9Zn0.1 S interface has the best Conduction Band Offset （ CBO） about 0. 3 eV. Finally, the solar cells were prepared and analyzed. And the thin film solar cell with the structure of CZTSe/Cd0. 9 Zn0.1 S has higher open circuit voltage than the CZTSe/CdS structure about 394 mV and the efficiency has reached 5.78%.

关 键 词：Cd1-xZnxS CZTSe XPS测试 能带结构 

分 类 号：TM914[电气工程—电力电子与电力传动]