硅雪崩光电探测器工作寿命试验及失效分析研究  

Research on Lifetime Testing and Failure Analysis of Silicon Avalanche Photoelectric Detectors

作　　者：邓敏 孙莉 周小燕[2] 何伟[2] 梁晨宇[2] 李龙[2] 

机构地区：[1]驻209所军事代表室,成都610041 [2]西南技术物理研究所,成都610041

出　　处：《兵器装备工程学报》2016年第8期160-163,共4页Journal of Ordnance Equipment Engineering

摘　　要：通过FMEA分析和加速寿命试验,确定了硅雪崩光电探测器的主要失效模式有两种,一种是暗电流超标,另一种是前放输出电压不合格;对这两种失效模式进行了失效分析,认为是高温应力引起器件内部气氛的变化,主要是氢气含量变大引起器件暗电流不合格;大电流引起前置放大电路上晶体管损伤是前放输出电压不合格的原因。Through FMEA analysis and accelerating lifetime testing,two primary failure modes of silicon avalanche photoelectric detectors were determined： excess of dark current and disqualification of preamplifer voltage. Failure analysis shows that： the change of internal atmosphere,due to high temperature stress,causes the dark current unnormal,especially large amount of hydrogen; damage of transistors in pre-amplifier caused by large current is main reason of disqualification of pre-amplifier voltage.

关 键 词：硅雪崩光电探测器 FMEA 加速寿命试验 失效分析 

分 类 号：TN249[电子电信—物理电子学]