多晶硅CVD反应器中新型热管的开发与仿真  

Development and Simulation of New-type Heat Pipes in Polysilicon CVD Reactor

作　　者：王晓静[1] 马东云[1] 李文艳[1] 张灿[1] 

机构地区：[1]天津大学化工学院,天津300354

出　　处：《压力容器》2016年第8期13-19,26,共8页Pressure Vessel Technology

基　　金：天津市自然科学基金资助项目(13JCZDJC27200)

摘　　要：基于已有的新型多晶硅CVD反应器,设计出有利于获得理想速度场和温度场的特殊热管结构,并对其进行了有限元强度分析和结构改进。对不同壁面发射率和不同壁面温度的热管进行了CFD仿真,计算得出:随着热管壁面温度的升高,多晶硅还原炉内环境温度也随之升高,但是多晶硅棒的总能耗与辐射能耗却随之降低;壁面温度从423 K上升至623 K时,硅棒总能耗和辐射能耗分别下降了2.84%和3.87%;随着发射率的降低,多晶硅还原炉内的环境温度、硅棒总能耗和辐射能耗都呈现下降趋势;硅棒的总能耗和辐射能耗分别下降了21.75%和24.42%。Based on the new designed polysilicon CVD reactor, a kind of special heat pipe was developed to obtain ideal velocity field and temperature field. Some finite element strength analysis and CFD simula- tions were applied to improve the structure and calculate the relation between consumption and different surface emissivity and surface temperature of the heat pipes. The results show that the average temperature increase versus the surface temperature of heat pipes, but the both of the total energy consumption and ra- diation energy consumption decrease ;when surface temperature increases from 423 K to 623 K, the total energy consumption and radiation energy consumption decrease by 2.84% and 3.87% respectively ;the average temperature,total energy consumption and radiation energy consumption show a trend of decline versus surface emissivity;the total energy consumption and radiation energy consumption decrease by 21.75% and 24.42% respectively.

关 键 词：多晶硅 CVD反应器 热管 有限元 CFD 

分 类 号：TH49[机械工程—机械制造及自动化] TQ051.5[化学工程]