High haze textured surface B-doped ZnO-TCO films on wet-chemically etched glass substrates for thin film solar cells  

作　　者：陈新亮 刘杰铭 方家 陈泽 赵颖 张晓丹 

机构地区：[1]Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University [2]Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Nankai University [3]Key Laboratory of Opto-Electronic Information Science and Technology for Ministry of Education, Nankai University

出　　处：《Journal of Semiconductors》2016年第8期28-34,共7页半导体学报（英文版）

基　　金：supported by the State Key Development Program for Basic Research of China(Nos.2011CBA00706,2011CBA00707);the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan(No.13JCZDJC26900);the Tianjin Major Science and Technology Support Project(No.11TXSYGX22100);the National High Technology Research and Development Program of China(No.2013AA050302);the Fundamental Research Funds for the Central Universities(No.65010341)

摘　　要：Textured glass substrates with crater-like feature sizes of-5-30 μm were obtained using the chemical etching method through adjusting the treatment round （R）. Pyramid-like boron-doped zinc oxide （ZnO：B） films with feature sizes of -300-800 nm were deposited on the etched glass substrates by the metal organic chemical deposition （MOCVD） technique using water, diethylzinc and 1%-hydrogen-diluted diborane. The ZnO：B films on the etched glass with micro/nano double textures presented a much stronger light-scattering capability than the conventional ZnO：B on the flat glass and their electrical properties changed little. Typical etched glass-3R/ZnO：B exhibited a high root mean square （RMS） roughness of -160 nm. The haze values at the wavelengths of 550 nm and 850 nm for etched glass-3R/ZnO：B sample were 61% and 42%, respectively. Finally, the optimized etched glass/ZnO：B was applied in the silicon （Si） based thin film solar cells. The high haze etched glass/ZnO：B substrates have potential merits for thin film solar cells.Textured glass substrates with crater-like feature sizes of-5-30 μm were obtained using the chemical etching method through adjusting the treatment round （R）. Pyramid-like boron-doped zinc oxide （ZnO：B） films with feature sizes of -300-800 nm were deposited on the etched glass substrates by the metal organic chemical deposition （MOCVD） technique using water, diethylzinc and 1%-hydrogen-diluted diborane. The ZnO：B films on the etched glass with micro/nano double textures presented a much stronger light-scattering capability than the conventional ZnO：B on the flat glass and their electrical properties changed little. Typical etched glass-3R/ZnO：B exhibited a high root mean square （RMS） roughness of -160 nm. The haze values at the wavelengths of 550 nm and 850 nm for etched glass-3R/ZnO：B sample were 61% and 42%, respectively. Finally, the optimized etched glass/ZnO：B was applied in the silicon （Si） based thin film solar cells. The high haze etched glass/ZnO：B substrates have potential merits for thin film solar cells.

关 键 词：SEMICONDUCTORS surfaces thin films crystal growth optical properties 

分 类 号：TM914.4[电气工程—电力电子与电力传动]