基于Simplorer驱动电阻对IGBT特性影响研究  

An Analysis of the Effects of Driving Resistance on IGBT Based on Simplorer

作　　者：邓坚[1] 汪正[1] 谢长君[1] 全书海[1] 

机构地区：[1]武汉理工大学自动化学院,湖北武汉430070

出　　处：《湖北工业大学学报》2016年第4期53-56,共4页Journal of Hubei University of Technology

基　　金：国家自然科学基金资助项目(51477125);国家重点基础研究发展计划(973计划)(NO.2013CB632505);湖北省科技支撑计划项目(2014BEC074)

摘　　要：驱动电阻对IGBT特性有直接关系,针对大多数仿真软件对IGBT模型的建立不够准确,采用Ansys公司的Simplorer对IGBT进行参数化建模,并用双脉冲测试方法来对IGBT搭建外围电路。重点分析栅极驱动电阻对IGBT的电压变化率和通断延时的关系,分析表明驱动电阻与IGBT电压变化率和开通延时时间的关系成线性关系。对驱动电阻阻值不同的驱动电路对IGBT进行仿真,仿真结果符合理论推导。因此,选择大小恰当的驱动电阻对IGBT使用具有一定工程意义。There is a direct relationship between driving resistance and the characteristics of IGBT.In light of the inaccuracy of the establishment of the IGBT model by most simulation software,this study makes use of Simplorer of Ansys company to achieve parameterized modelling of IGBT,and uses the method of the double pulse test to build peripheral circuits.The relationship between the voltage change rate and the on-off time delay of IGBT is analyzed,which reveals that the relationship between them is linear.The IGBT is tested through different driving resistances,and the test results concur with theoretical analysis.Therefore,the appropriate drive resistance for IGBT has certain engineering significance.

关 键 词：绝缘栅双极晶体管 双脉冲测试 驱动电阻 

分 类 号：TN386.2[电子电信—物理电子学]