基于CIGS薄膜太阳电池组件内级联工艺研究  

Investigation of monolithic integration process based on flexible CIGS thin film modules

作　　者：冯洋[1] 刘洋[1] 王赫[1] 张超[1] 乔在祥[1] 

机构地区：[1]中国电子科技集团公司第十八研究所重点实验室,天津300384

出　　处：《电源技术》2016年第9期1781-1783,共3页Chinese Journal of Power Sources

基　　金：国家自然科学基金(61404118)

摘　　要：采用532 nm激光一次完成P1、P2和P3三道划线,实现了柔性铜铟镓硒(CIGS)薄膜太阳电池组件的内级联。通过设计了P1、P2无缝连接结构,选择合适的绝缘、导电浆料,优化级联划线工艺,使单节子电池的死区总宽度减小到约450μm,并对激光划线的可靠性进行了评估。Monolithic integration based on flexible CIGS thin film modules was achieved. The patterning of P1, P2 and P3 was completed only using the laser with the length of 532 nm. A novel structure of interconnection was proposed. The trenches of P1 and P2 were connected without interval. The width of dead zone was reduced to 450μ m by means of selecting suitable insulating glue and conducting paste and optimizing the laser scribing process. The reliability of ablating P1 and P3 was also evaluated.

关 键 词：CIGS 激光划线 死区宽度 单片集成 

分 类 号：TM914.4[电气工程—电力电子与电力传动]