紫外激光辐照对非晶IZO薄膜电学性质影响  

UV laser for electrical properties of amorphous IZO films

作　　者：夏鹏[1] 马剑钢[1] 张昕彤[1] 薛金玲[1] 林东[1] 

机构地区：[1]东北师范大学紫外光发射材料与技术教育部重点实验室,长春130000

出　　处：《中国科技论文》2016年第17期1979-1982,共4页China Sciencepaper

基　　金：国家自然科学基金资助项目(91233204);吉林省科技发展计划资助项目(20140309012GX;20140201008GX);教育部高等学校博士学科点基金资助项目(20110043120004;20120043110002)

摘　　要：为了降低溶胶凝胶法制备透明导电薄膜的热退火温度,将溶胶-凝胶法与深紫外激光处理相结合,在石英玻璃衬底上制备了非晶铟锌氧(InZnO、IZO)透明导电薄膜。通过X射线衍射、紫外-可见光吸收光谱、霍尔效应测试以及红外光谱等测试手段,分析了激光辐照前后,薄膜的微观结构、光电性质以及材料中有机物共价键的变化情况。结果表明:248nm深紫外激光辐照并未改变薄膜的非晶结构,但薄膜的电学性能得到明显的提升,这归因于高能光子能有效去除因低温退火而残留在薄膜中的有机成分,并降低薄膜表面吸附氧的浓度,从而提高薄膜中载流子浓度和迁移率;最后,在250℃的退火温度下得到了光电性能良好的非晶IZO透明导电薄膜(电阻率为2.01×10^(-2)Ω·cm,在550nm处透过率为92.7%)。In order to reduce the annealing temperature of transparent conductive film prepared by the sol-gel method, highly con-ductive amorphous IZO films were deposited on quartz by an UV laser assisted sol-gel method. The effects of UV irradiation on the microstructure, optical and electrical properties ot amorphous IZO tilms were studied by using X-ray diffraction, ultraviolet- visible absorption spectroscopy, Hall measurements and Fourier transform infrared spectroscopy. Although amorphous IZO films＇ structure didn＇t make much change based on the XRD results, their eonduetivities were improved remarkably after irradia- tion by 248nm UV light. According to the FTIR and Hall measurements, such an improvement can be attributed to the decrease of the oxygen adsorbing concentration and the increase of the carrier concentration and mobility, which due to remove the organic component from amorphous IZO films under UV laser irradiation effect. At an annealing temperature as low as 250℃, the resis- tivity as low as 2.01×10 ^-2Ω. cm with the transmittance of 92.7% at 550nm were achieved.

关 键 词：透明导电薄膜 溶胶凝胶法 非晶铟锌氧 深紫外激光辐照 

分 类 号：O484.42[理学—固体物理]