低缺陷β-Ga_2O_3单晶材料生长技术研究  

Study on the Growth Technology of β-Ga_2O_3 Single Crystals

作　　者：张颖武[1] 练小正[1] 张政[1] 程红娟[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《河南科技》2016年第13期140-142,共3页Henan Science and Technology

摘　　要：β-Ga_2O_3是一种光电性能优异的宽带隙氧化物半导体材料,基于此,介绍β-Ga_2O_3的特性及应用潜力,阐述大尺寸β-Ga_2O_3单晶生长面临的难点,并结合国内外β-Ga_2O_3单晶生长技术进展,分析低缺陷β-Ga_2O_3单晶材料生长方法。β- Ga2O3 is a kind of wide band gap oxide semiconductor material with excellent photoelectric perfor-mance, based on this, the characteristics and application potential of β-Ga2O3 were introduced, the difficulties oflarge size β-Ga2O3 single crystal growth were described, then combined with the development of β-Ga2O3 single crys-tal growth technology, the method of β-Ga2O3 single crystal growth was summarized.

关 键 词：β-Ga2O3 宽带隙 单晶 

分 类 号：O782[理学—晶体学]