PECVD制备p型氢化硅氧薄膜及其光电性能研究  

Optical and Eletrical Properties of p-type a-Sio_X:H Thin Films Prepared by PEVD Method

作　　者：刘小娇[1] 施光辉[1] 殷俊传 李航[1] 刘洁青[1] 廖华[1] 胡志华[1] 

机构地区：[1]云南师范大学教育部可再生能源材料先进技术与制备重点实验室,太阳能研究所,云南昆明650500

出　　处：《云南师范大学学报（自然科学版）》2016年第5期5-8,共4页Journal of Yunnan Normal University:Natural Sciences Edition

基　　金：国家科技部国际科技合作专项基金资助项目(S2012ZR0054)

摘　　要：采用射频等离子体增强化学气相沉积(RF-PECVD)方法,在高气压、高氢稀释比和高功率密度条件下,以硅烷和二氧化碳为反应气体,硼烷为掺杂气体,在玻璃衬底上沉积了一系列的p型氢化非晶硅氧(p-SiOx:H)薄膜.利用Raman谱、XRD衍射谱、UV-VIS透射谱以及绝缘电阻测试仪等手段,分析了不同二氧化碳气体流量比对氢化硅氧薄膜的微结构和光电特性的影响.研究结果表明:薄膜为典型的非晶相;随着掺入气体CO2流量增加,薄膜沉积速率RG上升、光学带隙Eg及激活能Ea增大.In this paper,a series of p type hydrogenated amorphous silicon oxide（a-SiOx：H） thin films were prepared by using plasma enhanced chemical vapor deposition（PECVD） technique on glass substrates. Carbon dioxide and silane were used as the reaction gases; diborane was used as doping gas. Using Raman spectrum, X-raydiffraction spectrum, ultraviolet visible light transmis- sion spectrum（UV-VIS） and temperature dependent resistance measurement were used to analyze the influence of carbon dioxide gas flow on the microstructure and photoelectric properties of hy- drogenated amorphous silicon oxide thin film. It was found that all the films feature as a typical amorphous phase; with the increase of the CO2 gas flow rate, the deposition rate increases from 0.50nm s-1 to 0.55 nm. s-1; the optical band gap increase from 1.52 eV to 2.06 eV and the activation energy Ea increases gradually.

关 键 词：氢化非晶硅氧 光学带隙 CO2 激活能 PECVD 

分 类 号：TB383[一般工业技术—材料科学与工程] TM914[电气工程—电力电子与电力传动]