化学水浴法制备CdS薄膜的研究  

Research on CdS Thin Films Prepared by Chemical Bath Deposition

作　　者：李志山[1] 蒋志[1] 杨敏[1] 刘思佳[1] 唐语[1] 郝瑞亭[1] 王书荣[1] 

机构地区：[1]云南师范大学太阳能研究所,教育部可再生能源材料先进技术与制备重点实验室,云南省农村能源重点工程实验室,云南昆明650500

出　　处：《云南师范大学学报（自然科学版）》2016年第5期9-13,共5页Journal of Yunnan Normal University:Natural Sciences Edition

基　　金：国家自然科学基金资助项目(61167003)

摘　　要：采用化学水浴法在不同衬底上制备了CdS薄膜.测试表明,所制备薄膜具有良好的致密性且晶粒大小均匀、表面平整;随着薄膜厚度的增加,薄膜的结晶质量提高但透过率有所下降;在钠钙玻璃上制备的CdS薄膜的电阻率最小(42.15Ω·cm).将最优工艺制备的CdS薄膜应用于CZTS吸收层上,得到了效率为3.0%且具有高开路电压(701 mV)的CZTS薄膜太阳电池.The CdS thin film was fabricated on a （CBD）. The results show that the CdS film was dense different substrate by chemical bath method and uniform in grain size, and the crystal quali- ty of CdS film was improved with the increase of the film thickness but transmittance declined, be- sides the resistivity of CdS thin film prepared on the soda-lime glass was minimum（42.15 Ω cm）. Fi- nally,the CdS film prepared by the optimal process was applied to our deposited CZTS absorber layer,and we have obtained CZTS-based devices with 3.0% efficiency and high open circuit volt- age of 701 mV.

关 键 词：CDS薄膜 化学水浴 不同衬底 透过率 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TM914.4[电气工程—电力电子与电力传动]