STT-MRAM存储器的研究进展  

Recent progresses in spin transfer torque-based magnetoresistive random access memory(STT-MRAM)

作　　者：赵巍胜 王昭昊[1,2] 彭守仲 王乐知 常亮[1,2] 张有光[1,2] 

机构地区：[1]北京航空航天大学费尔北京研究院,北京100191 [2]北京航空航天大学电子信息工程学院,北京100191

出　　处：《中国科学：物理学、力学、天文学》2016年第10期63-83,共21页Scientia Sinica Physica,Mechanica & Astronomica

基　　金：国家自然科学基金(编号:61571023;61501013;61471015);国家科技部国际科技合作与交流项目项目(编号:2015DFE12880);中国博士后科学基金(编号:2015M570024);北京市科委项目(编号:D15110300320000)资助

摘　　要：基于自旋转移矩的磁性随机存储器(Spin Transfer Torque-Based Magnetoresistive RAM,STT-MRAM)具有非易失性、可无限擦写和快速写入等优点而有望成为下一代低功耗通用存储器.尤其是近年来STT-MRAM商用芯片的成功问世进一步推动了该器件的研究与应用.本文首先阐述了MRAM的基本原理与发展历程,着重介绍了写入技术的演变以及磁各向异性的改善.然后总结了近期在3个领域的研究成果:(1)学术界开展了大量研究以探讨制备工艺和器件结构等因素对界面垂直磁各向异性的影响;(2)CoFeB-MgO双界面结构被提出,该结构在不增大写入电流的前提下增强了磁隧道结的热稳定性势垒;(3)新兴的自旋轨道矩写入方式引起了广泛的关注,该技术有望解决传统自旋转移矩所面临的速度瓶颈和势垒击穿风险.最后,本文扼要地介绍了STT-MRAM在芯片设计领域的最新进展.Spin transfer torque-based magnetoresistive random access memory（STT-MRAM） promises to be the next-generation low-power universal memory thanks to the non-volatility, infinite endurance and fast switching speed. In particular,recently the research and application of the STT-MRAM have been greatly advanced by the launch of the commercial chip. In this paper, we firstly present the basic principle and development history of the STT-MRAM, highlighting the improvement in the write technology and magnetic anisotropy. Then the recent progresses are reviewed including the following three aspects： first, much research effort has been made to explore the influence of the fabrication process and device structure on the interfacial perpendicular magnetic anisotropy; second, CoFeB-MgO double-interface structure has been proposed to enhance the thermal stability of the magnetic tunnel junction（MTJ） without the increase in the write current; third, emerging spin-orbit torque（SOT） has attracted massive research interest since it promises to overcome the speed bottleneck and high-risk barrier breakdown suffered by the conventional STT. Finally, the recent development of the STT-MRAM chips is summarized.

关 键 词：垂直磁各向异性 自旋转移矩 自旋轨道矩 双界面磁隧道结 磁性随机存储器 低功耗 非易失 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]