直拉硅单晶中微缺陷的特征及演变  

Charateristics and transformation of microdefects in Czochralski silicon single crystal

作　　者：佟丽英[1] 高丹[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《合肥工业大学学报（自然科学版）》2016年第9期1196-1198,1225,共4页Journal of Hefei University of Technology：Natural Science

基　　金：国防基础科研资助项目(A1120132018)

摘　　要：直拉硅单晶抛光片经过高温氧化后,腐蚀显示出氧化诱生缺陷,包括漩涡缺陷和氧化层错(oxidation induced stacking faults,OISF),其形状和分布与单晶生长过程中形成的微缺陷有一定的对应关系。文章通过试验显示出漩涡缺陷的内部特征及OISF的密度变化,推测出其对器件性能产生的影响,并确定控制单晶质量的特征参数。After high temperature oxidation and etching ,Czochralski（CZ） silicon single crystal polished wafers show oxidation induced defects including swirl defects and oxidation induced stacking faults （OISF） ,whose shape and distribution correlate with microdefects during the single crystal growth process .The internal characteristics of swirl defects and the density distribution of OISF are experi‐mentally demonstrated and the effect of the defects on the device performance is analyzed .T he charac‐teristic parameters of single crystal quality are also determined .

关 键 词：微缺陷 氧化诱生 漩涡缺陷 氧化层错 

分 类 号：TN304[电子电信—物理电子学]