光通信用InGaAs/InP雪崩光电二极管  

InGaAs/InP Avalanche Photodiodes for Optical Communication

作　　者：尹顺政[1] 齐利芳[1] 赵永林[1] 张豫黔[1] 车向辉 张宇[1] Yin Shunzheng Qi Lifang Zhao Yonglin Zhang Yuqian Che Xianghui Zhang Yu(The 13^th Research Institute, CETC, Shijiazhuang 050051, China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2016年第10期759-763,共5页Semiconductor Technology

摘　　要：针对InGaAs/InP雪崩光电二极管（APD）器件结构,介绍了本地电场模型在器件设计上的应用。采用数值计算的方法,导出了吸收区、渐变区、电荷区和倍增区分离的（SAGCM）APD的电场分布。基于本地电场模型讨论了不同器件结构参数对器件穿通电压、击穿电压、倍增因子等特性的影响,实验结果与模拟结果相吻合,表明此方法可以用于器件的结构设计优化及特性分析。在此方法指导下,制作出了SAGCM APD。测试结果表明器件穿通电压小于30V,击穿电压小于45V,在倍增因子为1时,器件响应度大于0.9A/W,在倍增因子为10时,器件暗电流小于10nA,在倍增因子为5-12时,-3dB带宽均大于3GHz,其性能满足2.5Gbit/s光纤通信应用要求。In view of InGaAs/ InP avalanche photodiodes（ APD）, the application of local field model in the device design was introduced. By using the method of numerical calculation,the electric field distribution of separate absorption, grading, charge and multiplication avalanche photodiode（ SAGCM） APD was derived. Based on the local field model,the effects of different device structure parameters on the punch-through voltage,breakdown voltage and multiplication factors of the device were discussed. The experimental results were consistent with the simulation results,which shows that the method can be used for the structure design optimization and characteristic analysis of the device. Under the guidance of the method,the SAGCM APD was fabricated. The test results show that the punchthrough voltage of the device is less than 30 V and the breakdown voltage is less than 45 V. The responsivity is greater than 0. 9 A / W when the multiplication factor is 1. The dark current is less than 10 nA when the multiplication factor is 10 and the- 3 d B bandwidth is greater than 3 GHz when the multiplication factor is 5- 12. Performances of the device can meet the requirements of 2. 5 Gbit / s fiber optic communication applications.

关 键 词：InP 吸收、渐变、电荷、倍增层分离结构的雪崩二极管(SAGCM APD) 雪崩 本地电场模型 光通信 

分 类 号：TN304.26[电子电信—物理电子学] TN364.2