磁控溅射功率对Ti掺杂ZnO薄膜结构和光电性能的影响  

Effects of sputtering power on structure and opto-electrical properties of the Ti-doping ZnO thin films

作　　者：李园[1] 黄美东[1] 张建鹏[1] 杨明敏[1] 高倩[1] 

机构地区：[1]天津师范大学物理与材料科学学院,天津300387

出　　处：《天津师范大学学报（自然科学版）》2016年第5期28-32,共5页Journal of Tianjin Normal University：Natural Science Edition

基　　金：国家自然科学基金资助项目(61078059)

摘　　要：为了深入研究Ti掺杂ZnO薄膜的光电性能,采用射频磁控溅射技术在硅和玻璃基底上沉积Ti掺杂ZnO(TZO)薄膜.分别利用表面轮廓仪、X线衍射(XRD)、扫描电子显微镜(SEM)、UV-3600分光光度计和HMS-2000霍尔效应测试系统等表征手段分析溅射功率对TZO薄膜微观结构及光电性能的影响.结果表明:溅射功率对薄膜样品沉积速率的影响呈现先升后降的趋势,对电阻率的影响正好相反.当溅射功率为100W时,薄膜的沉积速率最大,为7.96nm/min,此时电阻率为最小的1.02×10-3Ω·cm;所有TZO薄膜在可见光波段的平均透过率均高于80%,为透明导电薄膜.Ti掺杂后的ZnO薄膜仍为六角纤锌矿结构,具有良好的c轴择优取向,溅射功率为100W时其微观结构均匀、平整、致密,表面形貌最好.In order to further study the opto-electrical property of ZnO doped with Ti, Ti-doping ZnO thin films （TZO） were fabricated on both silicon and glass slices by r.f. magnetron sputtering. The effects of sputtering power on microstructure, opto-electrical properties of the TZO films were analyzed by surface profiler, X-ray diffraetion （XRD）, scanning electron microscopy （SEM）, UV-3600 spectroscopy and HMS-3000 Hall Effect tester, respectively. The results show that deposition rate of the films increases first and then decreases with increasing sputtering power while the resistivity shows an opposite variation. The maximum deposition rate is 7.96 nm/min and the minimum resistivity is 1.02×10^-3Ω·cm when sputtering power is 100 W. All Ti-doping ZnO thin films are transparent conducting films which have more than 80% transmittance. Tidoping ZnO thin films still have hexagonal wurtzite structure and preferred c-axis orientation, and their microstrueture are uniform, smooth and compact with optimized surface morphology when sputtering power is 100 W.

关 键 词：射频磁控溅射 溅射功率 Ti掺杂TZO薄膜(TZO) 光电性能 

分 类 号：O436[机械工程—光学工程]