适用无源射频识别标签的集成压力传感器设计  

Design of Integrated Pressure Sensor for Passive Radio Frequency Identification Tag Application

作　　者：郭凤鸣[1] 李兵[1,2] 邓芳明[2] 

机构地区：[1]湖南机电职业技术学院汽车工程学院,长沙410151 [2]合肥工业大学电气与自动化工程学院,合肥230009

出　　处：《电子器件》2016年第4期796-800,共5页Chinese Journal of Electron Devices

基　　金：湖南省科技厅科学计划项目(2014FJ6017);湖南省教育厅科学研究项目(13C260);中国博士后基金项目(2014M561820)

摘　　要：针对无源射频识别(RFID)传感器标签发展的需求,采用商业化互补金属氧化物(CMOS)工艺,设计了一种集成电容式压力传感器及其接口电路。集成压力传感器采用金属层M1作为下电极,牺牲的金属层M2作为间隙层,通过过孔连接的金属层M3和M4及其介质构成上电极。传感器接口电路基于锁相环原理,采用全数字结构,将传感器信号转移到频率域处理。后期测试结果显示,所设计的压力传感器线性度高,温度稳定性好,接口电路在1 V电源电压下,只消耗了0.6m W功率,尤其适用于无源RFID标签的设计。Aimed at the need of the development of the passive Radio Frequency Identification （RFID） sensor tag, based on commercial Complementary-Metal-Oxide Semiconductor （CMOS）process, an integrated pressure sensor and its interface circuits are presented. The pressure sensor uses the metal layer M1 and the sacrificial metal layes M2 as the bottom electrode and the air gap. The top electrode of the pressure sensor makes use of the metal layers （M3, M4）and the corresponding dielectric layers. The sensor interface, based on phase-locked loop theory, adopts fully-digital architecture, resulting in transferring the sensor signal to frequency domain. The measurement results show that the proposed pressure sensor achieves high performance on linearity and temperature stability. The sensor interface, consmning only 0.6 μW power dissipation at 1 V supply voltage, is especially suitable for the design of passive RFID tag.

关 键 词：压力传感器 RFID标签 CMOS工艺 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]