一种高速数据存储系统的优化设计  

Optimized Design of a High-Speed Storage System

作　　者：尉易庆 吴利兵[2] 任勇峰[1,3] 贾兴中[1] 刘兴俊[1] 

机构地区：[1]中北大学电子测试技术国家重点实验室,太原030051 [2]晋中职业技术学院,山西晋中030600 [3]中北大学仪器科学与动态测试教育部重点实验室,太原030051

出　　处：《电子器件》2016年第4期816-819,共4页Chinese Journal of Electron Devices

摘　　要：针对记录器高速存储的需要,对基于FPGA和NANDFLASH的高速数据存储系统进行了优化设计。该设计通过采用交替双平面的编程方式,对存储器的存储速率进行了优化,使存储速率达到单片Flash最高存储速率的两倍,即60 Mbit/s;采用双绞线和电缆延展芯片组,对传输质量进行优化;采用边擦除边写入的方式对存储逻辑进行了优化。在器件选择方面,采用LVDS构成接口电路,FPGA控制逻辑电路。该优化设计的可行性和可靠性已通过工程实践验证。For the requirement of data recorder with high-speed storing, it provides an optimizational design to the high-speed system based on FPGA and NANDFLASH. By using the interleaving two-plane program mode to improve its storage speed, the storage rate of the recording device reaches the highest speed of single Flash, namely 60 Mbit/s. By using twisted-pair cables and chipset with extended cables, the transmission quality of the system is improved. And that the logical system for storing is optimized is obtained by using erasing and writing pattern at the same time. The logical circuit is controlled by FPGA using LVDS to build interface circuit in choosing devices. And the practicability and reliability of the project has been tested and confirmed by the engineering practices.

关 键 词：FPGA 高速存储 LVDS 逻辑设计 

分 类 号：TP301.6[自动化与计算机技术—计算机系统结构]