射频功率对富硅-氮化硅薄膜结构及性质影响  

Effect of Radio-frequency Power on Bond Structures and Properties of Silicon-rich Silicon Nitride Thin Films

作　　者：乌仁图雅[1] 周炳卿[1] 高爱明[1] 部芯芯 丁德松 WUREN Tu-yu ZHOU Bing-qing GAO Ai-ming BU Xin-xin DING De-song(Key Laboratory of Physics and Chemistry for Functional Material,College of Physics and Electron Information, Inner Mongolia Normal University ,Huhhot 010022, China)

机构地区：[1]内蒙古师范大学物理与电子信息学院功能材料物理与化学自治区重点实验室,呼和浩特010022

出　　处：《人工晶体学报》2016年第9期2322-2325,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51262022)

摘　　要：采用等离子体增强化学气相沉积法,以SiH_4、NH_3和N_2为反应气源,通过改变射频功率制备富硅-氮化硅薄膜材料。利用傅里叶变换红外吸收光谱,紫外-可见光透射光谱,扫描电镜等对薄膜材料结构与性质进行表征。实验表明,随着射频功率的逐渐增加,薄膜光学带隙缓慢减小、有序度增加,薄膜材料中的Si-H键、N-H键缓慢减小,Si-N键增多。分析结果发现,适量的增加射频功率有利于提高样品反应速率,使薄膜有序度增加,致密性增强,提高薄膜质量,但过高的射频功率会使薄膜质量变差。Silicon-rich silicon nitride thin films were deposited by plasma enhanced chemical vapor deposition method using SiH4, NH3 and N2 as reaction gas source with changing of radio-frequency power. The structures and properties of the thin film materials were characterized by Fourier transform infrared absorption spectroscopy, ultraviolet-visible transmission spectra and S E M , respectively. T h e results show that with radio-frequency power increasing, the bandgap of the film materials decrease slowly, the order degree of films improve gradually, and the Si-N, N-H bonds in the thin films decrease, with increasing of the Si-N bonds gradually. Analysis of the results find that properly increasing radio-frequency power is beneficial to the enhancing of the ion reaction rate in thin films, the improving of film order degree, the enhancing of thin film compactness, the getting better of thin film quality. But the outrageous radio-frequency power will damage thin film quality.

关 键 词：富硅-氮化硅薄膜 等离子增强化学气相沉积 射频功率 沉积速率 

分 类 号：O484[理学—固体物理]