不同镉源制备铜锌锡硫电池缓冲层的研究  

Buffer Layer of Cu_2ZnSnS_4 Solar Cells Prepared by Different Cadmium Sources

作　　者：陆熠磊 王书荣[1] 李志山[1] 蒋志[1] 杨敏[1] 刘思佳[1] LU Yi-lei WANG Shu-rong LI Zhi-shan JIANG Zhi YANG Min LIU Si-jia(Solar Energy Research Institute of Yunnan Normal University, Key Laboratory of Advance Technology and Preparation for Renewable Energy Materials, Kunming 650500,Chin)

机构地区：[1]云南师范大学太阳能研究所及教育部可再生能源材料先进技术与制备重点实验室,昆明650500

出　　处：《人工晶体学报》2016年第9期2341-2346,2351,共7页Journal of Synthetic Crystals

基　　金：西南地区可再生能源研究与开发协同创新中心(05300205020516009);国家自然科学基金(61167003)

摘　　要：目前制备CZTS薄膜太阳电池的缓冲层绝大多数采用硫酸镉作为镉源。本文将主要介绍用醋酸镉((Ch_3COO)_2Cd)、氯化镉(CdCl)2)和硝酸镉(Cd(NO_3)_2)和硫酸镉(CdSO_4)四种不同的镉源制备硫化镉薄膜。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和紫外可见分光光度计对硫化镉薄膜的结构、表面形貌和光学性能进行分析研究。分析结果表明以硝酸镉为镉源制备的硫化镉薄膜最适合作为缓冲层使用。将不同镉源制备的硫化镉薄膜作为CZTS薄膜电池的缓冲层,制备出的电池效率分别为:1.83%((Ch_3COO)_2Cd)、2.89%(CdCl)2)、3.4%(Cd(NO_3)_2)、3.19%(CdSO_4)。At present, the majority of CdS buffer layers of Cu2ZnSnS4 （ CZTS） thin film solar cells were prepared by using cadmium sulfate as the source of cadmium. In this paper, the preparation of CdS thin films with four different cadmium sources： cadmium acetate, cadmium chloride, cadmium nitrate and cadmium sulfate were mainly introduced. The crystal structure, morphology and optical properties of CdS thin films were characterized by X-Ray Diffraction（ XRD ） , scanning electron microscopy（ SEM） and UV- Vis-INR Spectrophotometer. The results reveal that the CdS thin film prepared by cadmium nitrate was the most suitable to the buffer layer of thin solar cells. Finally, the CdS buffer layers of CZTS thin film solar cells were fabricated using different cadmium sources, and the efficiency of corresponding cells was 1.83% （Ch3coo）2Cd, 2.89% CaCl2 , 3.4% Cd （ NO3）2, 3.19% CdSO4 Respectively.

关 键 词：不同镉源 硫化镉薄膜 铜锌锡硫 薄膜太阳电池 

分 类 号：O64[理学—物理化学]