CH_3NH_3PbI_3薄膜的光致发光增强效应  

Photoluminescence enhancement effect of CH_3NH_3PbI_3 film

作　　者：党伟[1] 刘旭[1] 白晶晶[1] 赵晋津[2] 张连水[1] 

机构地区：[1]河北大学物理科学与技术学院河北省光电信息材料重点实验室,河北保定071002 [2]石家庄铁道大学材料科学与工程学院,河北石家庄050043

出　　处：《河北大学学报（自然科学版）》2016年第5期462-467,共6页Journal of Hebei University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(21503066);高等学校科学技术研究项目(ZC2016003);保定市科学技术研究与发展指导计划项目(15ZG029);河北大学博士后项目(137161);河北大学引进人才项目(2014-283)

摘　　要：采用光谱测量技术分析了CH_3NH_3PbI_3薄膜的光致发光增强效应及其对载流子复合动力学的影响.实验结果表明,增加光浴功率密度有助于提高薄膜的光致发光增强速率,O2环境有利于薄膜的光致发光增强.CH_3NH_3PbI_3薄膜光浴处理引入的光致发光增强效应源于薄膜内缺陷态浓度降低.同时利用微波吸收介电谱技术,表征了CH_3NH_3PbI_3薄膜光浴前后,自由载流子和浅能级束缚载流子的复合动力学.发现光浴后,薄膜的自由载流子和浅能级束缚载流子浓度明显提高.The photoluminescence enhancement of CH3NH3PbI3 film and its effect on carrier recombi- nation dynamics were studied by using photoluminescence spectroscopy.Experimental results demonstrate that the rate of photoluminescence enhancement is higher when the power density of light soaking increases.And oxygen atmosphere is helpful to photoluminescence enhancement of CH3 NH3PbI3 film.The reduction of defect density in the film is the main mechanism responsible for the photoluminescence enhancement.Furthermore,the effect of light soaking on the recombination dynamics of free carriers and shallow trapped carriers was analyzed by microwave absorption dielectric spectroscopy. Densities of free carriers and shallow trapped carriers in CH3NH3PhI3 film show an obvious increase after the light soaking.

关 键 词：CH3NH3PbI3 光致发光增强 缺陷 载流子复合动力学 

分 类 号：O472[理学—半导体物理]