缺陷周围载流子分布的时域GUI演示  

The temporal evolution of carrier distribution around defects by GUI

作　　者：陈凤翔[1] 许伟康[1] 汪礼胜[1] 

机构地区：[1]武汉理工大学理学院物理科学与技术系,湖北武汉430070

出　　处：《大学物理》2016年第9期24-29,65,共7页College Physics

基　　金：武汉理工大学教学研究项目(w2014080;w2015053)资助

摘　　要：半导体材料中的微量缺陷能够在很大程度上影响其光电特性,不同类型的缺陷造成的影响也不一样.本文以数学物理方法中的差分解法为基础,对半导体物理中的连续性方程进行离散处理,同时借助Matlab中的GUI界面作为演示工具,分别展示了局域光照和均匀全域光照下,点缺陷、线缺陷对半导体中非平衡载流子空间分布的影响.通过相关参数的选择设置及物理图像的演示,可以让学生了解数学物理方法的应用,同时在半导体物理课程学习中获得更直观的学习体验.Even minor defects in semiconductor material will effectively affect its photoelectric properties, and different types of defects have different effects. In this paper, we use different methods of mathematical physics to solve continuity equation of semiconductor physics, and demonstrate the results with GUI tool by the Matlab software. The influences of defects on the spatial distribution of carrier under different illuminations, for example, local illumination and uniform global illumination, are shown in this GUI. After setting the related parameters and the subsequent demonstration, this GUI is helpful to guide the undergraduate students to understand the application of mathematical physics method, and allow them to gain a more intuitive learning experience in studying the semi- conductor physics.

关 键 词：缺陷 载流子浓度 时域演化 扩散长度 

分 类 号：O483[理学—固体物理]