飞秒激光微构造硅光电二极管的光电响应  

Responsivity of femtosecond-laser microstructured silicon photodiodes

作　　者：李媛[1] 冯国进[2] 赵利[3] 

机构地区：[1]运城学院物理与电子工程系,山西运城044000 [2]中国计量科学研究院光学与激光计量科学研究所,北京100013 [3]复旦大学物理系应用表面物理国家重点实验室,上海200433

出　　处：《强激光与粒子束》2016年第11期20-23,共4页High Power Laser and Particle Beams

摘　　要：在一定条件SF6气体氛围中,硅可在飞秒激光辐照区产生μm量级的尖峰结构。针对不同尖峰高度的微构造硅,在不同温度下退火,采用电子蒸发的方法在正反面分别镀上铝电极,制备出了飞秒激光微构造光电二极管,并测试了其光电响应。实验结果表明：飞秒激光微构造光电二极管的响应随微构造硅光电二极管的尖峰高度和退火温度的不同而不同。尖峰高度为3-4μm的样品在973K温度退火30min后,响应度可达0.55A/W。即使在1100nm波长处,这种新型的硅光电二极管的响应仍可高达0.4A/W。We investigated responsivity of photodiodes fabricated with silicon that was microstructured by femtosecond-laser pulses in a sulfur-containing atmosphere.In different temperature annealing,the aluminum electrodes were prepared using the electron evaporation method according to different spike height of microstructured silicon.The femtosecond laser microstructured photodiodes were made,and the opto-electronic responsivities of photodiodes was measured.Test results show that the responsivity of photodiodes depends on the height of spikes and annealing temperature,the responsivity can be as high as 0.55A/W.For wavelengths of 1100 nm below the bandgap we obtained responsivities about 0.4A/W,which is higher than that for standard silicon photodiodes.

关 键 词：飞秒激光微构造硅 光电二极管 响应度 退火 尖峰高度 

分 类 号：O472[理学—半导体物理]