CMOS IC失效机理与老炼频率的关系探讨  

Discussion on the Relationship between the Failure Mechanism of CMOS IC and Burn-in Frequency

作　　者：李兴鸿[1] 赵俊萍[1] 

机构地区：[1]北京微电子技术研究所,北京100076

出　　处：《电子产品可靠性与环境试验》2016年第5期6-9,共4页Electronic Product Reliability and Environmental Testing

摘　　要：从老炼试验的原理、CMOS IC的失效机理和功耗等几个方面对CMOS IC的失效机理与老炼频率的关系进行了探讨。通过分析发现,动态老炼的效果与频率的高低的关系不大。希望此结果对老炼方案的编制和老炼试验的实施起到一定的参考作用。The relationship between the failure mechanism of CMOS IC and bum-in frequency is discussed from the aspects of the principle of burn-in test, the failure mechanism of CMOS IC and the power consumption. Through the analysis, it is found that the effect of dynamic burn-in test has little relationship with the level of frequency. And it is hoped that this result can be used as a reference for the compilation of bum-in test program and the implementation of burn-in test.

关 键 词：集成电路 老炼 失效机理 频率 

分 类 号：TN432[电子电信—微电子学与固体电子学]