微波晶体管满功率老炼技术研究  

Research of Full-power Aging Technology for Microwave Transistor

作　　者：王小萍[1] 李雪[1] 张利敏[1] 秦皓[1] 

机构地区：[1]中国电子科技集团公司第55研究所,南京210016

出　　处：《电子与封装》2016年第10期43-47,共5页Electronics & Packaging

摘　　要：对35 micro-x封装的微波晶体管防自激老化电路的各部分功能进行了详细介绍,讨论了如何判定管子是否处于稳定工作状态的方法。通过在测试间里搭建老化电路,模拟实际老炼状态,使用红外热像仪测试壳温的方法,比较了不同散热条件下的壳温测试数据,得出了管子的壳温以及管帽和管底之间的温度差。试验证明:在管底使用铝块和导热硅胶相结合散热的方法,能解决35 micro-x封装形式的低结温晶体管老化过程中的结温控制问题。In the paper, functions of each part of the anti-self-oscillation aging circuit for 35 micro-x packaged microwave transistors are introduced in detail. And the method of determining whether the transistor is in stable state or not is discussed. In order to simulate the actual aging state, an aging circuit is built in the test room. In this way, the values of case temperature under different cooling conditions are compared, and the temperature difference between the top and the bottom of the case is figured out by infrared thermal imager.Results show that the junction temperature is controlled by using aluminum block and thermally conductive silica gel during the aging process of 35 micro-x package.

关 键 词：微波管 壳温 电老炼 导热硅胶 

分 类 号：TN306[电子电信—物理电子学]