VHF/UHF频段宽带低温放大器设计技术  

Design Technology of Broadband Cryogenic Amplifier in VHF/UHF Band

作　　者：宾峰[1,2] 倪津津[1,2] 杨时红[1,2] 刘洋[1,2] BIN Feng NIN Jin-jin YANG Shi-hong LIU Yang(CETC No. 16 Research Institute, Hefei 230043, China CETC Key Laboratory of Superconducting and Electronic Technologies, Hefei 230043, China)

机构地区：[1]中国电子科技集团公司第十六研究所,合肥230043 [2]中国电子科技集团公司超导电子技术重点实验室,合肥230043

出　　处：《微波学报》2016年第5期66-70,共5页Journal of Microwaves

摘　　要：通过分析HEMT器件低温特性以及低温低噪声放大器的应用特点,重点阐述了器件选择、电路拓扑结构对电路稳定性的影响,以及稳定性设计对于电路匹配设计的重要性,并提出了VHF/UHF频段宽带低温LNA的设计思路。以设计实例为基础,给出了改善电路稳定性、有利于驻波、噪声匹配的设计方法,低温LNA的测试结果(相对带宽≥90%、噪声系数≤0.3 d B@77 K、反射损耗≤-18 d B)和应用效果表明,文中的技术能够有效地指导设计与研制,具有较大的参考意义。By analyzing the low temperature characteristics of HEMT devices and the application of cryogenic LNA,this paper presents the design of broadband LNA used for VHF/UHF band,from the perspectives of device selection and circuit stability influenced by circuit topology. This paper expounds the importance of stability considered in design process for circuit matching. From the concrete example,the design method of improving the stability of the circuit and the matching of standing wave and noise are given. The analysis of the test results（ relative bandwidth≥90%; noise figure≤0. 3d B@ 77K;return loss≤-18 d B） and application effects of cryogenic LNA proposes that the design technology involved in this paper can guide the design and development effectively,which is of great reference significance.

关 键 词：低温低噪声放大器 甚高频/超高频 稳定性 负反馈 

分 类 号：TN722.3[电子电信—电路与系统]