Detection of lead ions with AlGaAs/InGaAs pseudomorphic high electron mobility transistor  

作　　者：牛吉强 张杨 关敏 王成艳 崔利杰 杨秋旻 李弋洋 曾一平 

机构地区：[1]Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

出　　处：《Journal of Semiconductors》2016年第11期40-42,共3页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61204012,61274049,61376058);the Beijing Natural Science Foundation(Nos.4142053,4132070);the Beijing Nova Program(Nos.2010B056,xxhz201503)

摘　　要：Lead poisoning is a serious environmental concern, which is a health threat. Existing technologies al- ways have some drawbacks, which restrict their application ranges, such as real time monitoring. To solve this problem, glutathione was functionalized on the Au-coated gate area of the pseudomorphic high electron mobility transistor （pHEMT） to detect trace amounts of Pb^2＋. The positive charge of lead ions will cause a positive potential on the Au gate of the pHEMT sensor, which will increase the current between the source and the drain. The response range for Pb^2＋ detection has been determined in the concentrations from 0.1 pmol/L to 10 pmol/L. To our knowledge, this is currently the best result for detecting lead ions.Lead poisoning is a serious environmental concern, which is a health threat. Existing technologies al- ways have some drawbacks, which restrict their application ranges, such as real time monitoring. To solve this problem, glutathione was functionalized on the Au-coated gate area of the pseudomorphic high electron mobility transistor （pHEMT） to detect trace amounts of Pb^2＋. The positive charge of lead ions will cause a positive potential on the Au gate of the pHEMT sensor, which will increase the current between the source and the drain. The response range for Pb^2＋ detection has been determined in the concentrations from 0.1 pmol/L to 10 pmol/L. To our knowledge, this is currently the best result for detecting lead ions.

关 键 词：Environmental monitoring A1GaAs/InGaAs PHEMT BIOSENSOR 

分 类 号：TN386[电子电信—物理电子学]