High-responsivity 40 Gbit/s InGaAs/InP PIN photodetectors integrated on silicon-on-insulator waveguide circuits  

作　　者：尹冬冬 何婷婷 韩勤 吕倩倩 张冶金 杨晓红 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2016年第11期54-59,共6页半导体学报（英文版）

基　　金：Project supported by the High-Tech Research and Development Program of China(Nos.2015AA016904,2015AA012302);the National Basic Research Program of China(Nos.2012CB933503,2013CB932904);the National Natural Foundation of China(Nos.61274069,61176053,61021003,61435002)

摘　　要：This paper presents a high-responsivity and high-speed InGaAs/InP PIN photodetector integrated onto the silicon waveguide substrate utilizing the divinyltetramethyldisiloxane-benzocyclobutene （DVS-BCB） adhesive bonding method. A grating coupler is adopted to couple light from the fiber to the silicon waveguide. Light in the silicon photonic waveguide is evanescently coupled into the photodetector. The integrated photodetector structure is first simulated using the FDTD （finite difference time domain） solutions software and the simulation results show a detection efficiency of 95%. According to the simulation result, the integrated photodetector is fabricated. The measured responsivity of the fabricated integrated photodetector with a detection length of 30μm is 0.89 A/W excluding the coupling loss between the fiber and the grating coupler and the silicon propagation loss at the wave-length of 1550 nm with a reverse bias voltage of 3 V. Measured 3-dB bandwidth is 27 GHz using the Lightwave Component Analyzer （LCA）. The eye diagram signal test results indicate that the photodetector can operate at a high speed of 40 Gbit/s. The integrated photodetector is of great significance in the silicon-based optoelectronic integrated chip which can be applied to the optical communication and the super node data transmission chip of the high-performance computer.This paper presents a high-responsivity and high-speed InGaAs/InP PIN photodetector integrated onto the silicon waveguide substrate utilizing the divinyltetramethyldisiloxane-benzocyclobutene （DVS-BCB） adhesive bonding method. A grating coupler is adopted to couple light from the fiber to the silicon waveguide. Light in the silicon photonic waveguide is evanescently coupled into the photodetector. The integrated photodetector structure is first simulated using the FDTD （finite difference time domain） solutions software and the simulation results show a detection efficiency of 95%. According to the simulation result, the integrated photodetector is fabricated. The measured responsivity of the fabricated integrated photodetector with a detection length of 30μm is 0.89 A/W excluding the coupling loss between the fiber and the grating coupler and the silicon propagation loss at the wave-length of 1550 nm with a reverse bias voltage of 3 V. Measured 3-dB bandwidth is 27 GHz using the Lightwave Component Analyzer （LCA）. The eye diagram signal test results indicate that the photodetector can operate at a high speed of 40 Gbit/s. The integrated photodetector is of great significance in the silicon-based optoelectronic integrated chip which can be applied to the optical communication and the super node data transmission chip of the high-performance computer.

关 键 词：integrated photodetectors BONDING silicon on insulator evanescent wave 

分 类 号：TN15[电子电信—物理电子学]