Non-equilibrium carrier capture,recombination and annealing in thick insulators and their impact on radiation hardness  

作　　者：G.I.Zebrevt M.G.Drosdetsky A.M.Galimov 

机构地区：[1]The Department of Micro-and Nanoelectronics of National Research Nuclear University"MEPHI",Moscow 115409,Russia

出　　处：《Journal of Semiconductors》2016年第11期73-79,共7页半导体学报（英文版）

摘　　要：This paper describes an approach to prediction of the thick insulators＇ radiation response based on modeling of the charge yield, which is dependent on irradiation temperature, dose rate, and electric field magnitudes. Temperature behavior of the charge yield and degradation saturation due to the interface precursor depletion has been modeled and simulated. Competition between the time-dependent and true dose rate （ELDRS） effects has been simulated and discussed within a framework of the rate-equation-based mathematical model. It was shown that the precursor trap in the thick insulating oxides can be important at high dose rates. It was also shown that full filling of the shallow hole traps in the insulating oxide bulk can cause suppression of dose-rate sensitivity at relatively high dose rates, especially in thick insulators.This paper describes an approach to prediction of the thick insulators＇ radiation response based on modeling of the charge yield, which is dependent on irradiation temperature, dose rate, and electric field magnitudes. Temperature behavior of the charge yield and degradation saturation due to the interface precursor depletion has been modeled and simulated. Competition between the time-dependent and true dose rate （ELDRS） effects has been simulated and discussed within a framework of the rate-equation-based mathematical model. It was shown that the precursor trap in the thick insulating oxides can be important at high dose rates. It was also shown that full filling of the shallow hole traps in the insulating oxide bulk can cause suppression of dose-rate sensitivity at relatively high dose rates, especially in thick insulators.

关 键 词：bipolar devices total dose effects dose rate effects ELDRS insulators modeling 

分 类 号：TN[电子电信]