基于光敏BCB工艺的InP基器件性能的研究  

Fabrication and Characteristics of Integrated Devices with Photosensitive BCB Dielectric on InP Wafer

作　　者：赵华[1] 王溪[1] 丁芃[1] 姚鸿飞[1] 苏永波[1] 金智[1] 刘新宇[1] Zhao Hua Wang Xi Ding Peng Yao Hongfei Su Yongbo Jin Zhi Liu Xinyu(Institute of Microelectronics, Chinese Academy of Sciences, Bering 100029, China)

机构地区：[1]中国科学院微电子研究所高频高压中心,北京100029

出　　处：《真空科学与技术学报》2016年第10期1119-1123,共5页Chinese Journal of Vacuum Science and Technology

摘　　要：采用光敏BCB介质工艺制作了In P基TRL校准件和无源器件,研究了这种毫米波片上集成技术。光敏BCB工艺包括三层金属和一层BCB介质。为了验证工艺可行性,采用电磁仿真器设计了TRL校准件和两种无源电路。使用TRL去嵌技术,得到两种无源电路在75~110 GHz内的本征特性。通过比较去嵌后本征特性和仿真结果,发现与仿真结果相比S11/S22的幅度波动小于5 d B,S12/S21的幅度波动小于0.3 d B。仿真结果与去嵌后的本征结果重合度比较好,这进一步说明光学BCB工艺比较适合毫米波校准件的研制。Here, we addressedthe integration technology of the micro/millimeter-wave Thru-Reflect-Line （TRL） calibration standard and passive circuits with photosensitive benzocyclobutene （BCB） dielectric layers on InP wafer. The advanced BCB-based technique includes the growth and patterning of three metal layers at most and the coating of BCB dielectric layer. The TRL calibration standard and two passive circuits were designed and charac- terized with an EM simulator,and the intrinsic properties of the two passive circuits in 75 to 110 GHz range were e- valuated in TRL de-embedding technique. The good agreement between the simulated and measured resultsshows that the advanced photosensitive BCB dielectric process is suitable for fabrication and integration of millimeter wave TRL calibration standard. To be specific, the magnitude deviations of S11/S22 and S12/S21 were less than 5 dB and 0. 3 dB, respectively, in the two microstrip passive devices.

关 键 词：BCB介质工艺 TRL校准件 微带无源器件 毫米波 

分 类 号：TN4[电子电信—微电子学与固体电子学]