钝化层和铝电极浆料共烧结制备硅太阳能电池背电极  

Back surface field structure of silicon solar cell by co-sintering of passivation film and aluminum paste

作　　者：杜冲[1,2,3] 赵振杰[1,2,3] 陈慧君[1,2,3] 张宏[1,2,3] 

机构地区：[1]西安交通大学电气工程学院,陕西西安710049 [2]西安交通大学电力设备电气绝缘国家重点实验室,陕西西安710049 [3]西安交通大学苏州研究院,江苏苏州215123

出　　处：《电子元件与材料》2016年第11期72-76,共5页Electronic Components And Materials

基　　金：苏州市应用基础研究计划科技项目资助(No.SYG201448)

摘　　要：提出了一种新的硅太阳能电池背场结构及其形成方法,在硅片背面先制备一层氮化硅膜,然后再印刷背面铝电极,通过钝化层和铝电极浆料共烧结制备硅太阳能电池背场结构。在常规铝浆中添加易于同氮化硅反应的高活性玻璃粉,对比了钝化层厚度、玻璃粉种类和含量对氮化硅层的烧蚀效果以及对背电极硅片间接触电阻的影响。当铝浆中高活性玻璃粉添加量为质量分数4%,氮化硅厚度10 nm时,比常规铝浆在无钝化膜的硅片上制备的电池最高效率高出约0.26%。A new back electrode structure of Si solar ceils and its fabrication process were presented. The silicon wafer was passivated by SiNx film on the back side firstly, and then Al electrode paste was printed on SiNx film. After high temperature co-sintering of SiNx film and the A1 paste, the back surface field （BSF） and AI electrode were formed. Highly reactive glass flits which were easy to react with SiNxwere added in the conventional AI paste. Effects of SiNx thickness, the kinds and contents of glass frits on the corrosion action of Al paste on the SiNx film, and the contact resistance between Si wafer and AI electrode were investigated, respectively. Experiments results indicate that compared with the conventional Si solar cells, the average conversion efficiency is improved by about 0.26% when the content of highly reactive glass flits mass fraction is 4% and the thickness of SiNx film is 10 nm.

关 键 词：晶体硅太阳能电池 背电极 钝化层 背电场 共烧结 铝电极浆料 

分 类 号：TM914[电气工程—电力电子与电力传动]