混晶β-(Al,Ga)_2O_3的禁带调节（英文）  

Wide Bandgap Engineering of β-(Al,Ga)_2O_3 Mixed Crystals

作　　者：肖海林[1,2] 邵刚勤[3] 赛青林[1] 夏长泰[1] 周圣明[1] 易学专[1] 

机构地区：[1]中国科学院上海光学机械精密研究所,强激光材料重点实验室,上海201800 [2]中国科学院大学,北京100049 [3]武汉理工大学材料复合新技术国家重点实验室,武汉430070

出　　处：《无机材料学报》2016年第11期1258-1262,共5页Journal of Inorganic Materials

基　　金：Science and Technology Commission of Shanghai Municipality(13111103700)

摘　　要：通过光学浮区法生长了不同浓度的β-(Al,Ga)_2O_3混晶。当Al^(3+)掺杂浓度达到0.26的时候,晶体生长出现开裂现象。进行X射线衍射分析,结果表明所得β-(Al,Ga)_2O_3混晶保持了β-Ga_2O_3的晶体结构,晶体没有出现其他杂质相,并且随着Al^(3+)浓度的增加,晶格常数a、b、c减小,β角增大;核磁共振光谱显示Al的确进入了Ga的格位并且取代了Ga的四配位和六配位格位,两者的比例约为1:3。通过测试β-(Al,Ga)_2O_3混晶的透过光谱,得出β-(Al,Ga)_2O_3混晶的禁带调节范围为4.72~5.32 eV,扩大了β-Ga_2O_3晶体在更短波段的光电子探测器方面的应用。Bandgap tunable β-（Al, Ga）2O3 mixed crystals with different Al3＋ concentration were grown by the optical floating zone （OFZ） method. When the nominal Al3＋ doping concentration was close to 0.26, cracking appeared. The powder X-ray diffraction （XRD） revealed that β-（A1, Ga）203 mixed crystals kept the crystal structure of β-Ga2O3 without foreign phases and the lattice parameters decreased with the increasing Al3＋ concentration. 27Al magic angle spinning （MAS） nuclear magnetic resonance （NMR） spectroscopy showed that Al3＋ occupied Ga3＋ positions and the ratio of Al3＋（IV）/Al3＋（VI） was about 1：3. The transmittance spectra were measured to investigate the bandgap of β-（A1, Ga）2O3 mixed crystals. Results showed that the bandgap increased continuously with the Al3＋ concentration increasing from 4.72 eV to 5.32 eV, which may extend the application of β-Ga2O3 crystal in optoelectronic devices operating at shorter wavelength.

关 键 词：β-Ga2O3 Al3+ 禁带宽度 半导体 

分 类 号：TN304[电子电信—物理电子学]