用于相控阵雷达的高线性度低噪声放大器  

A High linearity Low Noise Amplifier for Phased Array Radar

作　　者：张小波[1] 谢生[1] 毛陆虹[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《微电子学》2016年第5期620-623,共4页Microelectronics

基　　金：国家自然科学基金重点项目(61331003)

摘　　要：基于IBM 0.18μm SiGe BiCMOS工艺,提出了一种用于Ku波段相控阵雷达的高线性度低噪声放大器。该放大器采用2级级联结构,第1级优化可获得最小的噪声性能,第2级优化可提高电路的增益和线性输出功率。为了提高线性度,第2级采用了具有线性补偿功能的线性化偏置电路。仿真结果表明,在中心频率为16.5GHz,带宽为2GHz的频带范围内,噪声系数小于3.9dB,其最小值为3.22dB,功率增益大于23.5dB,输出1-dB压缩点在中心频率处大于6.5dBm。在3.3V电源电压下,静态功耗为66mW,芯片面积为(1 245×580)μm2。Based on IBM 0.18μm SiGe BiCMOS process,a novel high-linearity low-noise amplifier circuit applied for Ku-band phased array radars was presented.A structure of two cascades was adopted in the amplifier.The first stage was optimized for high noise performance while the second optimized for high power gain and high linear output power.To increase linearity,the linearity compensation bias circuit was used in the second stage.The simulation results showed that the noise figure was less than 3.9dB with a minimum value of 3.22 dB,the power gain was more than 23.5dB,the output 1-dB compression point was 6.5dBm at a center frequency of 16.5GHz with 2GHz bandwidth.The chip occupied an area of（1 245×580）μm^2,and the power consumption was 66 mW at apower supply of 3.3V.

关 键 词：相控阵 低噪声放大器 SIGE BICMOS 线性补偿 单片集成 

分 类 号：TN433[电子电信—微电子学与固体电子学]