靶基距对低温直流射频耦合磁控溅射制备ZnO：Al薄膜的影响  

Influence of Target - substrate Distance on ZnO： Al Film Prepared with DC RF Coupling Magnetron Sputtering at Low Temperature

作　　者：王平[1] Wang Ping 1

机构地区：[1]蚌埠玻璃工业设计研究院,安徽蚌埠233010

出　　处：《中国玻璃》2016年第5期7-10,共4页China Glass

摘　　要：本文采用直流与射频耦合磁控溅射的方法，低温下制备高性能的AZO薄膜，并着重研究靶基距对薄膜结构晶相、表面形貌以及光电性能影响，为AZO薄膜实际应用提供技术指导。High - performance AZO film is prepared with DC RF coupling magnetron sputtering at low temperature. This paper mainly studies the influence of target -substrate distance on structure crystal phase, surface topography and photo- electric property of AZO film and provides technical instructions for practical appliance of AZO film.

关 键 词：直流射频耦合磁控溅射 AZO薄膜 靶基距 

分 类 号：O484.4[理学—固体物理]