超晶格雪崩光电二极管的结构优化及性能研究  

Structure optimization and performance study of superlattice avalanche photodiode

作　　者：杜玉杰[1] 邓军[1] 夏伟[1] 牟桐[1] 史衍丽[2] 

机构地区：[1]北京工业大学电子信息与控制工程学院,光电子技术省部共建教育部重点实验室,北京100124 [2]昆明物理研究所,云南昆明650223

出　　处：《激光与红外》2016年第11期1358-1362,共5页Laser & Infrared

摘　　要：基于碰撞离化理论研究了异质材料超晶格结构对载流子离化率的作用,设计得到In_（0.53）Ga_（0.47）As/In_（0.52）Al_（0.48）As超晶格结构的雪崩光电二极管。通过分析不同结构参数对器件性能的影响,得到了低隧道电流、高倍增因子的超晶格结构雪崩层,根据电场分布方程模拟了器件二维电场分布对电荷层厚度及掺杂的依赖关系,并优化了吸收层的结构参数。对优化得到的器件结构进行仿真并实际制作了探测器件,进行光电特性测试,与同结构普通雪崩光电二极管相比,超晶格雪崩光电二极管具有更强的光电流响应,在12.5～20 V的雪崩倍增区,超晶格雪崩光电二极管在具备高倍增因子的同时具有较低的暗电流,提高了器件的信噪比。The effect of the heterogeneous material superlattice structure on carrier ionization rate was studied based on the collision ionization theory, and then the avalanche photodiode with In0. 53 Ga0.47 As/In0. 52 Al0.4s As superlattice was designed. Through analyzing the influence of different structural parameters on the device performance ,the superlattice avalanche layer with low tunnel current and high multiplication factor was obtained. The relationship between two di- mensional electric field distribution and charge layer thickness or doping was studied based on the electric field distri- bution equation, and the structural parameters of the absorption layer were optimized. Compared with ordinary ava- lanche photodiode,the optimized superlattice avalanche photodiode has stronger photoeurrent response, and superlat- tice avalanche photodiode has high multiplication factor and low dark current in the avalanche multiplication area of 12. 5 ～20 V,whieh greatly enhance the signal to noise ratio of the device.

关 键 词：超晶格雪崩光电二极管 离化率 信噪比 

分 类 号：TN362[电子电信—物理电子学]