氦离子行为与钨中相关缺陷演化的研究  

Study on the behaviour of helium and the evolution of the related defect in tungsten

作　　者：王勇[1] 吴双[2] 邓爱红[1] 王康[1] 王玲[3] 卢晓波[1] 张元元[1] WANG Yong WU Shuang DENG Ai-Hong WANG Kang WANG Ling LU Xiao-Bo ZHANG Yuan-Yuan(College of Physical Science and Technology, Sichuan University, Chengdu 610064, China School of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu 610041, China Key Laboratory for Radiation Physics and Technology of Ministry of Education,Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China)

机构地区：[1]四川大学物理科学与技术学院,成都610064 [2]西南民族大学电气信息工程学院,成都610041 [3]四川大学原子核科学与技术研究所辐射物理及技术教育部重点实验室,成都610064

出　　处：《四川大学学报（自然科学版）》2016年第6期1345-1348,共4页Journal of Sichuan University(Natural Science Edition)

基　　金：国家自然科学基金(11275132;11675114)

摘　　要：本文通过离子注入向钨体中注入100keV氦离子,并使用慢正电子束分析(SPBA)手段研究了不同注量的氦在钨体内的行为以及氦相关缺陷的演化.实验结果表明:在不同的氦注量条件下,样品的S-W参数呈相同线性分布显示氦离子的注入会引入同一类型的空位型缺陷,并且随着氦离子注量增加,S参数的增大表明引入空位型缺陷浓度的逐渐增加.通过与其他未退火样品对比发现样品退火后的S参数出现明显改变,该结果表明相对于其他影响因素如注量,钨中空位型缺陷更容易受热效应的影响.In this paper, the 100 keV helium ions were implanted in tungsten. The behaviour of helium and the evolution of the related defect have also been studied as a function of helium fluence by slow pos- itron beam analysis （SPBA）. The experimental results indicated that helium ions irradiation under dif- ferent helium fluence introduces the same vacancy-type defects on the basis of the phenomenon that the S-W date presents the same linear distribution. Moreover, with the increment of helium fluence, the concentration of vacancy-type defects in the samples increased correspondingly. It is also found that the S parameter of the sample annealed has a significant change by comparing with other samples without annealing. The result suggested that vacancy-type defects are more likely to be affected by thermal treatment than other influencing factors such as fluence.

关 键 词：钨 离子注入 氦 空位型缺陷 慢正电子束分析 

分 类 号：TB31[一般工业技术—材料科学与工程]