SiO_2/Si衬底上Au纳米颗粒制备的研究  

The Preparation of Gold Nanoparticles on SiO_2/Si Substrate

作　　者：许怡红 王尘[2] 韩响[1] 赖淑妹 陈松岩[1] 

机构地区：[1]厦门大学物理科学与技术学院,福建厦门361005 [2]厦门理工学院光电与通信工程学院,福建厦门361024

出　　处：《厦门大学学报（自然科学版）》2016年第6期881-887,共7页Journal of Xiamen University：Natural Science

基　　金：国家自然科学基金(61474081;61534005)

摘　　要：采用射频磁控溅射结合快速热退火的方法在SiO_2/Si衬底上制备Au纳米颗粒,研究了溅射条件、退火温度对Au纳米颗粒的尺寸及其分布的影响.结果表明,对于溅射后呈现分立且尺寸较小的Au纳米颗粒样品,其具有较好的热稳定性,而对于溅射后Au近似成膜的样品,Au颗粒随着退火温度的升高先减小后增大再减小,认为这是由于退火过程中存在着应力释放与表面能最小化2种竞争机制共同作用的结果;通过降低溅射功率,最终制备得到高密度(1.1×1012 cm-2)、小尺寸(<5nm)的Au纳米颗粒,并有望在金属纳米晶半导体存储器中得到应用.Gold （Au） nanoparticles are fabricated on SiO2/Si substrate by the combination of radio frequency magnetron sputtering and rapid thermal annealing.Effects of the sputtering condition and the annealing temperature on the size and the distribution of Au nanoparticles are investigated.Results show that samples with discrete-and small-sized Au nanoparticles after sputtering deposition enjoy high thermal stabilities.By contrast,for samples with continuous Au film, the size of Au nanoparticles change non-monotonicity with the increase of annealing temperatures. This phenomenon can be attributed to the existence of two competing mechanisms, namely, the relaxation of stress and surface energy minimization during annealing processes.Finally, the high number density （1.1 × 10^12 cm-2） and small sizes （〈5 nm） of Au nanoparticles are achieved by the decrease of sputtering power,offering guides for the ap- plication to metal nanocrystal semiconductor memory.

关 键 词：Au纳米颗粒 射频磁控溅射 快速热退火 

分 类 号：O484.1[理学—固体物理]