Influence of thickness on strain state and surface morphology of AlN grown by HVPE  

作　　者：孙茂松 张纪才 黄俊 李雪威 王林军 刘雪华 王建峰 徐科 

机构地区：[1]School of Materials Science and Engineering,Shanghai University [2]Platform for Characterization and Test,Suzhou Institute of Nano-Tech and Nano-Bionics,CAS [3]Suzhou Nanowin Science and Technology Co,Ltd

出　　处：《Journal of Semiconductors》2016年第12期18-21,共4页半导体学报（英文版）

基　　金：Project supported by the National Basic Research Program of China(No.2012CB619305);the National Natural Science Foundation of China(Nos.61274127,61474133,61325022);the CAS Project of Introduction of Outstanding Technical Talent

摘　　要：AIN thick films were grown on c-plane sapphire substrates by hydride vapor phase epitaxy at high temperature. The evolution of the strain state and crystal quality of AIN with increase of thickness were investigated by transmission electron microscopy, field-emission scanning electron microscopy, Raman spectra and atomic force microscopy （AFM）. As the thickness increased, the stress in the epilayers decreased gradually, which was attributed to the reaction of dislocations at the first several microns in thickness. When the thickness was more than 20 μm, the stress was almost fully relaxed due to the formation of cracks. Wet etching experiments indicated that the dislocation density decreased with the increase of thickness. The AFM images showed that the density of dark spots on the surface obviously decreased and the atomic steps became straight as the thickness increased.AIN thick films were grown on c-plane sapphire substrates by hydride vapor phase epitaxy at high temperature. The evolution of the strain state and crystal quality of AIN with increase of thickness were investigated by transmission electron microscopy, field-emission scanning electron microscopy, Raman spectra and atomic force microscopy （AFM）. As the thickness increased, the stress in the epilayers decreased gradually, which was attributed to the reaction of dislocations at the first several microns in thickness. When the thickness was more than 20 μm, the stress was almost fully relaxed due to the formation of cracks. Wet etching experiments indicated that the dislocation density decreased with the increase of thickness. The AFM images showed that the density of dark spots on the surface obviously decreased and the atomic steps became straight as the thickness increased.

关 键 词：AIN HVPE surface morphology strain state 

分 类 号：TQ133.1[化学工程—无机化工] TB383.2[一般工业技术—材料科学与工程]