云南高校图书馆联盟文献共享服务平台- HVPE

HVPE: 作品数：79被引量：84H指数：5; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：张荣郑有炓修向前张嵩于广辉更多>>; 相关机构：中国科学院南京大学北京大学河北工业大学更多>>; 相关期刊：更多>>; 相关基金：国家自然科学基金国家高技术研究发展计划国家重点基础研究发展计划河北省自然科学基金更多>>

HVPE法同质外延氧化镓厚膜技术研究: 《人工晶体学报》2025年第2期227-232,共6页董增印王英民张嵩李贺孙科伟程红娟刘超; 卤化物气相外延(HVPE)法因生长速度快、掺杂可控等优势主要被用于生长β-Ga_(2)O_(3)同质外延片。本文采用垂直结构的HVPE设备进行β-Ga_(2)O_(3)厚膜的同质外延,探究了不同生长压力对β-Ga_(2)O_(3)的生长速度和外延质量的影响。研究发...; 关键词：卤化物气相外延 β-Ga_(2)O_(3) 同质外延生长压力氮杂质 Ⅵ/Ⅲ比

高均匀性6英寸GaN厚膜的高速率HVPE生长研究: 《人工晶体学报》2025年第1期11-16,共6页许万里甘云海李悦文李彬郑有炓张荣修向前; 国家重点研发计划(2022YFB3605201,2022YFB3605204)。; 氢化物气相外延(HVPE)是制备GaN单晶衬底的关键技术,由于生长速率较高,如何控制大尺寸GaN高速率高均匀性生长对于获得高质量GaN衬底具有重要意义。本文针对自主设计研制的6英寸(1英寸=2.54 cm)GaN衬底用HVPE设备,通过数值模拟和实际生...; 关键词：氮化镓氢化物气相外延晶体生长数值模拟厚度不均匀性

采用正交试验的喷淋式HVPE氧化镓生长腔仿真研究: 《半导体光电》2024年第6期910-917,共8页吴诗颖陈琳蒋少清郭方正陶志阔; 国家自然科学基金项目(61574079);江苏省光电信息功能材料重点实验室开放课题项目(TK222018)。; 第三代半导体材料α-Ga_(2)O_(3)因具有高宽禁带及优异的巴利加优值,被广泛应用于高功率器件。在α-Ga_(2)O_(3)的诸多生长方法中,氢化物气相外延法(HVPE)可以满足制备大尺寸α-Ga_(2)O_(3)晶圆对生长速率、质量和成本的要求。文章对α-...; 关键词：α-Ga_(2)O_(3) HVPE 正交试验生长速率均匀性

Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination: 《Chip》2024年第3期36-42,共7页Bo Li Jinpei Lin Linfei Gao Zhengweng Ma Huakai Yang Zhihao Wu Hsien-Chin Chiu Hao-Chung Kuo Chunfu Zhang Zhihong Liu Shuangwu Huang Wei He Xinke Liu; supported by the GuangdongMajor Project of Basic and Applied Basic Research(2023B0303000012);Guangdong Science Foundation for Distinguished Young Scholars(2022B1515020073);Shenzhen Science and Technology Program(JCYJ20220818102809020).; In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)technique.To enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Scho...; 关键词：Vertical GaN SBD HVPE Dual ion co-implantation Leakage mechanism Device reliability

Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance: 《Journal of Semiconductors》2024年第8期74-80,共7页Aleksei Almaev Alexander Tsymbalov Bogdan Kushnarev Vladimir Nikolaev Alexei Pechnikov Mikhail Scheglov Andrei Chikiryaka; support of the Russian Science Foundation,grant number 20-79-10043-P.; Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) we...; 关键词：HVPE gallium oxide solar-blind ultraviolet detector self-powered mode

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy: 《Chinese Physics B》2023年第2期399-404,共6页王闯高晓冬李迪迪陈晶晶陈家凡董晓鸣王晓丹黄俊曾雄辉徐科; supported by the National Natural Science Foundation of China (Grant No. 61974158);the Natural Science Fund of Jiangsu Province, China (Grant No. BK20191456)。; A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates(NPSSs) by hydride vapor phase epitaxy(HVPE). The coalescence, stress evolution, and dislocation annihilat...; 关键词：hydride vapor phase epitaxy(HVPE) ALN threading dislocations nano-patterned sapphire substrate

Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy被引量：1: 《Chinese Physics B》2022年第7期477-480,共4页Jiafan Chen Jun Huang Didi Li Ke Xu; We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy(HⅤPE).The influences of growth condition on surface morphology,residual strain and crystalline quality of Al N films ha...; 关键词：hydride vapor phase epitaxy(HVPE) POROUS ALN

基于蓝宝石衬底生长GaN的立式HVPE控制系统设计被引量：1: 《微纳电子技术》2022年第5期458-464,共7页余平孙文旭修向前马思乐; 国家重点研发计划资助项目(2017YFB0404201)。; 为了实现氢化物气相外延(HVPE)技术在蓝宝石衬底上外延生长氮化镓(GaN)过程的全自动控制,进一步提高系统的精确性和稳定性,设计了一种新型HVPE控制系统。该控制系统选用可编程逻辑控制器(PLC)为控制器,采用组态王开发系统监控软件。利...; 关键词：蓝宝石衬底氢化物气相外延(HVPE) 氮化镓(GaN) 模糊控制系统仿真系统测试

Ga_(x)In_(1-x)P氢化物气相外延制备工艺及性能研究进展: 《半导体技术》2022年第4期266-273,共8页张嵩程文涛王健程红娟闫礼孙科伟董增印; 重点实验室基金一般项目(61428080107)。; 对Ⅲ-Ⅴ族化合物半导体Ga_(x)In_(1-x)P材料的性质、应用和外延工艺的发展进行了简单阐述,重点介绍了Ga_(x)In_(1-x)P材料的氢化物气相外延(HVPE)制备工艺对Ga_(x)In_(1-x)P外延层质量和Ga_(x)In_(1-x)P太阳电池性能的影响,并对国外研...; 关键词：Ⅲ-Ⅴ族化合物 Ga_(x)In_(1-x)P 氢化物气相外延(HVPE) 外延层太阳电池

Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE被引量：1: 《Chinese Physics B》2021年第6期531-535,共5页Xiao Wang Yu-Min Zhang Yu Xu Zhi-Wei Si Ke Xu Jian-Feng Wang Bing Cao; supported by the National Key R&D Program of China (Grant Nos. 2017YFB0404100 and 2017YFB0403000);the National Natural Science Foundation of China (Grant No. 61704187);the Key Research Program of the Frontier Science of the Chinese Academy of Sciences (Grant No. QYZDB-SSWSLH042)。; Separation technology is an indispensable step in the preparation of freestanding GaN substrate. In this paper, a largearea freestanding GaN layer was separated from the substrate by an electrochemical liftoff process...; 关键词：electrochemical etching LIFTOFF hydride vapor phase epitaxy(HVPE) freestanding GaN

HVPE