Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance  

作　　者：Aleksei Almaev Alexander Tsymbalov Bogdan Kushnarev Vladimir Nikolaev Alexei Pechnikov Mikhail Scheglov Andrei Chikiryaka 

机构地区：[1]Laboratory of Metal Oxide Semiconductors,Research and Development Center for Advanced Technologies in Microelectronics,National Research Tomsk State University,Tomsk 634050,Russia [2]Fokon LLC,Kaluga 248035,Russia [3]Department of Semiconductor Electronics and Physics of Semiconductors,National University of Science and Technology MISIS,Moscow 119049,Russia [4]Perfect Crystals LLC,Saint Petersburg 194223,Russia

出　　处：《Journal of Semiconductors》2024年第8期74-80,共7页半导体学报（英文版）

基　　金：support of the Russian Science Foundation,grant number 20-79-10043-P.

摘　　要：Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

关 键 词：HVPE gallium oxide solar-blind ultraviolet detector self-powered mode 

分 类 号：TN23[电子电信—物理电子学]