HVPE法同质外延氧化镓厚膜技术研究  

Homoepitaxial Growth of Gallium Oxide Thick Films by HVPE Method

作　　者：董增印 王英民 张嵩[1] 李贺 孙科伟 程红娟[1] 刘超[2] DONG Zengyin;WANG Yingmin;ZHANG Song;LI He;SUN Kewei;CHENG Hongjuan;LIU Chao(The 46th Research Institute,China Electronics Technology Group Corporation,Tianjin 300220,China;School of Integrated Circuits,Shandong University,Jinan 250100,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220 [2]山东大学集成电路学院,济南250100

出　　处：《人工晶体学报》2025年第2期227-232,共6页Journal of Synthetic Crystals

摘　　要：卤化物气相外延(HVPE)法因生长速度快、掺杂可控等优势主要被用于生长β-Ga_(2)O_(3)同质外延片。本文采用垂直结构的HVPE设备进行β-Ga_(2)O_(3)厚膜的同质外延,探究了不同生长压力对β-Ga_(2)O_(3)的生长速度和外延质量的影响。研究发现,在生长相同厚度β-Ga_(2)O_(3)外延膜时,降低生长压力虽然使生长速度有所降低,但更容易获得生长条纹连贯的、高结晶质量的β-Ga_(2)O_(3)厚膜。分析了外延膜中非故意掺杂的氮杂质来源,排除了氮气分解的可能性,通过调控Ⅵ/Ⅲ比,即提升氧气分压,能够有效降低β-Ga_(2)O_(3)外延膜中的氮杂质浓度,从8×10^(16) cm^(-3)降低至1×10^(16) cm^(-3)。最终,采用优化后的外延工艺,制备出高质量的2英寸(1英寸=2.54 cm)HVPE β-Ga_(2)O_(3)外延片,膜厚和载流子浓度分别是15.8μm和1.5×10^(16) cm^(-3),两者的不均匀性分别是3.6%和7.6%。Halide vapor phase epitaxy(HVPE)is mainly utilized to obtain β-Ga_(2)O_(3)homoepitaxial wafers because of its advantages such as high growth rate and efficient impurity doping controllability.In this paper,the homoepitaxial β-Ga_(2)O_(3)thick films were grown by a vertical HVPE system.The effects of different growth pressures on the growth rate and epitaxial quality were investigated.It is found that when growing epitaxial β-Ga_(2)O_(3)films of the same thickness,although reducing the growth pressure slows down the growth rate,it can easily obtain high crystalline quality β-Ga_(2)O_(3)thick films with unbroken microstep arrays.The source of unintentional nitrogen impurities in the epitaxial films was analyzed,and the possibility of nitrogen decomposition was ruled out.By adjusting the Ⅵ/Ⅲ ratio,specifically by increasing the oxygen partial pressure,the concentration of nitrogen impurities in β-Ga_(2)O_(3)epitaxial films can be effectively reduced from 8×10^(16) cm^(-3) to 1×10^(16) cm^(-3).Finally,2-inch high-quality HVPEβ-Ga_(2)O_(3)epitaxial wafer has been successfully achieved with optimized epitaxial growth parameters.The film thickness and carrier concentration are 15.8μm and 1.5×10^(16) cm^(-3),the inhomogeneity of which are 3.6% and 7.6%,respectively.

关 键 词：卤化物气相外延 β-Ga_(2)O_(3) 同质外延 生长压力 氮杂质 Ⅵ/Ⅲ比 

分 类 号：O73[理学—晶体学]