Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination  

作　　者：Bo Li Jinpei Lin Linfei Gao Zhengweng Ma Huakai Yang Zhihao Wu Hsien-Chin Chiu Hao-Chung Kuo Chunfu Zhang Zhihong Liu Shuangwu Huang Wei He Xinke Liu 

机构地区：[1]College of Materials Science and Engineering,College of Electronics and Information Engineering,Institute of Microelectronics(IME),Guangdong Research Center for Interfacial Engineering of Functional Materials,State Key Laboratory of Radio Frequency Heterogeneous Integration,Shenzhen University,Shenzhen 518060,China [2]Department of Electronic Engineering,Chang Gung University,Taoyuan 333,Taiwan,China [3]Department of Photonics and the Institute of Electro-Optical Engineering,and with Foxconn Semiconductor Research Institute,National Chiao Tung University,Hsinchu 300,Taiwan,China [4]Xidian University,School of Microelectronics,Xi’an,710071,China

出　　处：《Chip》2024年第3期36-42,共7页芯片（英文）

基　　金：supported by the GuangdongMajor Project of Basic and Applied Basic Research(2023B0303000012);Guangdong Science Foundation for Distinguished Young Scholars(2022B1515020073);Shenzhen Science and Technology Program(JCYJ20220818102809020).

摘　　要：In this study,a galliumnitride(GaN)substrate and its 15μmepitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy(HVPE)technique.To enhance the breakdown voltage(VBR)of vertical GaN-on-GaN Schottky barrier diodes(SBDs),a dual ion coimplantation of carbon and heliumwas employed to create the edge termination.The resulting devices exhibited a low turn-on voltage of 0.55 V,a high Ion/Ioff ratio of approximately 109,and a lowspecific onresistance of 1.93 mU cm^(2).When the ion implantation edge was terminated,the maximumVBR of the devices reached 1575 V,with an average improvement of 126%.These devices demonstrated a high figure of merit(FOM)of 1.28 GW cm^(-2) and showed excellent reliability during pulse stress testing.

关 键 词：Vertical GaN SBD HVPE Dual ion co-implantation Leakage mechanism Device reliability 

分 类 号：TN31[电子电信—物理电子学]