Porous AlN films grown on C-face SiC by hydride vapor phase epitaxy  

作　　者：Jiafan Chen Jun Huang Didi Li Ke Xu 陈家凡;黄俊;李迪迪;徐科(Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China

出　　处：《Chinese Physics B》2022年第7期477-480,共4页中国物理B（英文版）

摘　　要：We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy(HⅤPE).The influences of growth condition on surface morphology,residual strain and crystalline quality of Al N films have been investigated.With the increase of theⅤ/Ⅲratio,the growth mode of Al N grown on C-face 6H-SiC substrates changes from step-flow to pit-hole morphology.Atomic force microscopy(AFM),scanning electron microscopy(SEM)and Raman analysis show that cracks appear due to tensile stress in the films with the lowestⅤ/Ⅲratio and the highestⅤ/Ⅲratio with a thickness of about 3μm.In contrast,under the mediumⅤ/Ⅲratio growth condition,the porous film can be obtained.Even when the thickness of the porous Al N film is further increased to 8μm,the film remains porous and crack-free,and the crystal quality is improved.

关 键 词：hydride vapor phase epitaxy(HVPE) POROUS ALN 

分 类 号：TQ133.1[化学工程—无机化工] TB383.2[一般工业技术—材料科学与工程]