Ga_(x)In_(1-x)P氢化物气相外延制备工艺及性能研究进展  

Research Progress on Preparation Technology and Performance of Ga_(x)In_(1-x)P by Hydride Vapor Phase Epitaxy

作　　者：张嵩[1,2] 程文涛 王健 程红娟[1,2] 闫礼[3] 孙科伟[1,2] 董增印 Zhang Song;Cheng Wentao;Wang Jian;Cheng Hongjuan;Yan Li;Sun Kewei;Dong Zengyin(The 46th Research Institute,CETC,Tianjin 300220,China;Key Laboratory of Advanced Semiconductor Crystal Materials Technology,CETC,Tianjin 300220,China;The 18th Research Institute,CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220 [2]中国电子科技集团公司新型半导体晶体材料技术重点实验室,天津300220 [3]中国电子科技集团公司第十八研究所,天津300220

出　　处：《半导体技术》2022年第4期266-273,共8页Semiconductor Technology

基　　金：重点实验室基金一般项目(61428080107)。

摘　　要：对Ⅲ-Ⅴ族化合物半导体Ga_(x)In_(1-x)P材料的性质、应用和外延工艺的发展进行了简单阐述,重点介绍了Ga_(x)In_(1-x)P材料的氢化物气相外延(HVPE)制备工艺对Ga_(x)In_(1-x)P外延层质量和Ga_(x)In_(1-x)P太阳电池性能的影响,并对国外研究中用于制备Ga_(x)In_(1-x)P材料的垂直和水平HVPE结构设计、外延的原理和工艺改进、Ga_(x)In_(1-x)P太阳电池的结构等对外延层质量和相关器件性能的影响进行了评述,总结了近年来HVPE法制备Ga_(x)In_(1-x)P材料在太阳电池领域的研究进展,HVPE有望代替MOCVD而成为Ga_(x)In_(1-x)P的主流制备工艺。最后,对HVPE法制备Ga_(x)In_(1-x)P太阳电池的研究成果和难点以及未来研究的重点进行了总结,并对国内在该领域的研究工作指明了方向。The properties,applications and development of epitaxial process ofⅢ-Ⅴcompound semiconductor Ga_(x)In_(1-x)P materials are briefly described.The effects of hydride gas phase epitaxy(HVPE)preparation process of Ga_(x)In_(1-x)P materials on the quality of Ga_(x)In_(1-x)P epitaxial layer and the performance of Ga_(x)In_(1-x)P solar cells are emphasized.The effects of vertical and horizontal HVPE structure design,the principle and process improvement of epitaxy,and the structure of Ga_(x)In_(1-x)P solar cells on the quality of the epitaxial layer and the performance of related devices in foreign research are reviewed,and the research progress of Ga_(x)In_(1-x)P materials prepared by HVPE method in solar cell field in recent years are summarized.HVPE is expected to replace MOCVD and becomes the mainstream preparation process of Ga_(x)In_(1-x)P.Finally,the research results,difficulties and future research focus of Ga_(x)In_(1-x)P solar cells prepared by HVPE method are summarized,and the direction of domestic research in this field is pointed out.

关 键 词：Ⅲ-Ⅴ族化合物 Ga_(x)In_(1-x)P 氢化物气相外延(HVPE) 外延层 太阳电池 

分 类 号：TN304.2[电子电信—物理电子学] TN304.054