Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy  

作　　者：王闯 高晓冬 李迪迪 陈晶晶 陈家凡 董晓鸣 王晓丹 黄俊 曾雄辉 徐科 Chuang Wang;Xiao-Dong Gao;Di-Di Li;Jing-Jing Chen;Jia-Fan Chen;Xiao-Ming Dong;Xiaodan Wang;Jun Huang;Xiong-Hui Zeng;Ke Xu(School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China;Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China;Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Appliation,School of Physical Science and Technology,Suzhou University of Science and Technology,Suzhou 215009,China;Shenyang National Laboratory for Materials Science,Jiangsu Institute of Advanced Semiconductors,Suzhou 215000,China;uzhou Nanowin SCcince and Technology Co.,Ltd,Suzhou 215123,China)

机构地区：[1]School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China [2]Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China [3]Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application,School of Physical Science and Technology,Suzhou University of Science and Technology,Suzhou 215009,China [4]Shenyang National Laboratory for Materials Science,Jiangsu Institute of Advanced Semiconductors,Suzhou 215000,China [5]Suzhou Nanowin Science and Technology Co.,Ltd,Suzhou 215123,China

出　　处：《Chinese Physics B》2023年第2期399-404,共6页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No. 61974158);the Natural Science Fund of Jiangsu Province, China (Grant No. BK20191456)。

摘　　要：A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates(NPSSs) by hydride vapor phase epitaxy(HVPE). The coalescence, stress evolution, and dislocation annihilation mechanisms in the AlN layer have been investigated. The large voids located on the pattern region were caused by the undesirable parasitic crystallites grown on the sidewalls of the nano-pattern in the early growth stage. The coalescence of the c-plane AlN was hindered by these three-fold crystallites and the special triangle void appeared. The cross-sectional Raman line scan was used to characterize the change of stress with film thickness, which corresponds to the characteristics of different growth stages of AlN. Threading dislocations(TDs) mainly originate from the boundary between misaligned crystallites and the c-plane AlN and the coalescence of two adjacent c-plane AlN crystals, rather than the interface between sapphire and AlN.

关 键 词：hydride vapor phase epitaxy(HVPE) ALN threading dislocations nano-patterned sapphire substrate 

分 类 号：O786[理学—晶体学]