采用正交试验的喷淋式HVPE氧化镓生长腔仿真研究  

Numerical Study on Hydride Vapor-Phase Epitaxy Chamber with Showerhead for Gallium Oxide Growth using Orthogonal Experiments

作　　者：吴诗颖 陈琳[1] 蒋少清 郭方正 陶志阔[1] WU Shiying;CHEN Lin;JIANG Shaoqing;GUO Fangzheng;TAO Zhikuo(College of Electronic and Optical Engineering,College of Flexible Electronics,Nanjing University of Posts and Telecommunications,Nanjing 210023,CHN)

机构地区：[1]南京邮电大学电子与光学工程学院、柔性电子学院,南京210023

出　　处：《半导体光电》2024年第6期910-917,共8页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61574079);江苏省光电信息功能材料重点实验室开放课题项目(TK222018)。

摘　　要：第三代半导体材料α-Ga_(2)O_(3)因具有高宽禁带及优异的巴利加优值,被广泛应用于高功率器件。在α-Ga_(2)O_(3)的诸多生长方法中,氢化物气相外延法(HVPE)可以满足制备大尺寸α-Ga_(2)O_(3)晶圆对生长速率、质量和成本的要求。文章对α-Ga_(2)O_(3)的喷淋式HVPE生长腔进行了生长过程的三维数值模拟,并引入正交试验方法对基于计算流体力学模拟的生长参数进行分析,系统且有效地评估了参数对生长结果的作用。研究结果表明,大尺寸α-Ga_(2)O_(3)晶圆的生长速率、均匀性与衬底倾斜角度、O_(2)和N_(2)入口速率、GaCl出口下倾角以及喷淋头的结构密切相关;同时提出了参数的优化组合,为工业上获得生长速率和生长均匀性均衡的外延层提供参考。The third-generation semiconductor materialα-Ga_(2)O_(3) is widely used in high-power electronic devices owing to its wide bandgap and excellent Baliga figure of merit.Among many growth methods ofα-Ga_(2)O_(3),hydride vapor-phase epitaxy(HVPE)can meet the requirements of growth rate,quality,and cost in preparing large-scaleα-Ga_(2)O_(3) wafers.A three-dimensional numerical simulation of theα-Ga_(2)O_(3) growth process in HVPE growth chamber with showerheads was conducted to systematically and effectively evaluate the effect of parameters on growth results.The orthogonal experimental method was introduced to analyze the growth parameters based on computational fluid dynamics(CFD)simulations.The results indicate that growth rate and uniformity are closely related to the substrate tilt angle,O_(2) inlet rate,N_(2) inlet rate,GaCl outlet dip angle,and structure of showerheads.This study proposes an optimized combination of parameters,providing a useful reference for achieving a balance between growth rate and growth uniformity of the epitaxial layer in actual experiments.

关 键 词：α-Ga_(2)O_(3) HVPE 正交试验 生长速率 均匀性 

分 类 号：TN305.5[电子电信—物理电子学] TN304.2TN302