CO_2等离子体处理对SnO_2:F/P-a-SiC:H肖特基势垒调控  

THE CONTROL OF SnO_2:F/P-a-SiC:H SCHOTTKY BARRIER BY CO_2 PLASMA TREATMENT

作　　者：李天天[1] 张晓丹[1] 张德坤[1] 孙健[1] 王广才[1] 赵颖[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,天津300071

出　　处：《太阳能学报》2016年第11期2988-2993,共6页Acta Energiae Solaris Sinica

基　　金：国家高技术研究发展(863)计划(2013AA050302);天津市应用基础与前沿技术研究计划重点项目(15JCZDJC31300);江苏省科技支撑计划(BE2014147-3);高等学校博士学科点专项科研基金(20120031110039)

摘　　要：采用CO_2等离子体(COP)处理FTO导电玻璃,通过控制处理时间进行FTO/p-a-SiC:H肖特基势垒的调控。在实验中发现COP对FTO表面有轻微刻蚀作用并且会影响其绒度因子值。同时由于B-M效应的减弱会引起其在短波处的吸收比的增加。COP处理FTO会增加其表面的氧吸附,进而增加表面能。COP较长时间处理FTO会降低非晶硅电池在短波段的响应,通过测试J-V特性曲线发现,由于COP处理FTO可以使FTO的功函数增加0.18 eV,降低FTO/p-a-SiC:H界面处肖特基势垒。COP处理的FTO前电极的电池V_(oc)由未处理的0.92 V提高到处理后的0.99 V和FF由0.68提高到0.70。CO2 plasma（COP）treatment is introduced in this experiment to control the Schottky barrier in the FTO/p-a-SiC：H interface by treatment time. The COP can etch the FTO surface slightly and that will affect the Hazz of FTO. At the same time, due to the weakening of the B-M effect, the absorptance of FTO is increased in the short wavelength. COP treatment on the FTO will increase the adsorption of surface oxygen to improve the surface free energy. The EQE of a-Si： H solar cell can be reduced at the short wavelength, and the COP treatment also can increase the FTO work function of 0.18 eV to decrease the Schottky barrier in the FTO/p-a-SiC ： H interface. After COP treatment, the Voc and FF of a-Si ： H soalr cell have been increased form 0.92 V to 0.99 V and 0.68 from 0.70, respectively.

关 键 词：CO2等离子体 FTO 肖特基势垒 非晶硅太阳电池 

分 类 号：TK513.5[动力工程及工程热物理—热能工程]