磁控溅射四元靶材法制备17.5%效率CIGS电池研究  

STUDY OF Cu(In,Ga)Se_2 SOLAR CELL WITH 17.5% EFFICIENCY ACHIEVED BY SPUTTERING A QUATERNARY TARGET

作　　者：欧阳良琦 庄大明[1] 张宁 刘沅东 赵明[1] 余新平 

机构地区：[1]清华大学材料学院先进成形制造教育部重点实验室,北京100084 [2]北京四方创能光电科技有限公司,北京100085

出　　处：《太阳能学报》2016年第11期2994-2998,共5页Acta Energiae Solaris Sinica

摘　　要：使用磁控溅射铜铟镓硒(CuIn_(1-x) Ga_xSe_2,CIGS)四元靶材制备沉积态预制膜,重点研究硒化时硒化氢(H_2Se)浓度对吸收层晶粒尺寸以及电池性能的影响。研究表明,当H_2Se浓度从1%提高到5%时,随着H_2Se浓度的升高,吸收层晶粒尺寸增大,减少作为载流子复合中心的晶界缺陷,有利于提高电池开路电压和短路电流,最终提高电池效率。H_2Se浓度从5%进一步提高到10%时,虽然晶粒尺寸进一步增加,但是表面镓含量下降导致表面禁带宽度降低,电池开路电压没有进一步提高。通过先硒化后硫化热处理工艺,可得到表面和底部禁带宽度高于吸收层内部的U型能带结构。硫化处理后,电池平均开路电压从539 mV提高至619 mV,电池平均效率从14.1%提高至15.9%。在制备减反层MgF_2后,获得最高效率为17.5%的电池。The as-deposited CuIn1-xGaxSe2（CIGS）absorbers were prepared by magnetron sputtering from a quaternary CIGS target. The effect of the concentration of H2Se during the selenization process on the grain size of the absorbers and performance of the devices was studied. The results showed that when the concentration of H2Se is increased from 1% to 5%, the grain size of the absorbers is increased. It reduces the grain boundaries which act as recombination centers, it is beneficial to the improvement of Voc and Jsc, which leads to the increase of the efficiency. When the concentration of H2Se is increased from 5% to 10%, the grain size is further increased, while the content of Ga on the surface is decreased, which leads to the decrease the surface bandgap. As a result, Voc is not improved with the further increase of H2Se concentration. By introducing a sulfuration process after selenization, a U shape bandgap profile （the bandgap of the top part and bottom part is higher than that of the middle part） can be obtained. After sulfuration, the average Voo is increased from 539 to 619 mV and the average efficiency is enhanced from 14.1% to 15.9%. After coating the anti-reflection layer of MgF2, the highest efficiency reaches 17.5%.

关 键 词：铜铟镓硒 磁控溅射 太阳电池 靶材 效率 

分 类 号：TM615[电气工程—电力系统及自动化]