Nanoscale spatial phase modulation of GaAs growth in V-grooved trenches on Si(001) substrate  

作　　者：李士颜 周旭亮 孔祥挺 李梦珂 米俊萍 王梦琦 潘教青 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2016年第12期451-454,共4页中国物理B（英文版）

基　　金：Project supported by the National Science and Technology Major Project of Science and Technology of China(Grant No.2011ZX02708);the National Natural Science Foundation of China(Grant No.61504137)

摘　　要：This letter reports the nanoscale spatial phase modulation of GaAs growth in V-grooved trenches fabricated on a Si （001） substrate by metal-organic vapor-phase epitaxy, Two hexagonal GaAs regions with high density of stacking faults parallel to Si {111 } surfaces are observed. A strain-relieved and defect-free cubic phase GaAs was achieved above these highly defective regions. High-resolution transmission electron microscopy and fast Fourier transforms analysis were performed to characterize these regions of GaAs/Si interface. We also discussed the strain relaxation mechanism and phase structure modulation of GaAs selectively grown on this artificially manipulated surface.This letter reports the nanoscale spatial phase modulation of GaAs growth in V-grooved trenches fabricated on a Si （001） substrate by metal-organic vapor-phase epitaxy, Two hexagonal GaAs regions with high density of stacking faults parallel to Si {111 } surfaces are observed. A strain-relieved and defect-free cubic phase GaAs was achieved above these highly defective regions. High-resolution transmission electron microscopy and fast Fourier transforms analysis were performed to characterize these regions of GaAs/Si interface. We also discussed the strain relaxation mechanism and phase structure modulation of GaAs selectively grown on this artificially manipulated surface.

关 键 词：phase modulation GAAS GROOVES Si 

分 类 号：TN304.23[电子电信—物理电子学]