热丝CVD法沉积固态扩散源制备晶硅太阳电池p^+/n^+发射极研究  

p^+/n^+ Emitter of the Crystalline Silicon Solar Cell Fabricated with Solid Diffusion Source Deposited by HWCVD Method

作　　者：宿世超 王涛[1] 韩宇哲[1] 田罡煜 黄海宾[1] 高超[1] 岳之浩[1] 袁吉仁[1] 周浪[1] 

机构地区：[1]南昌大学光伏研究院,南昌330031

出　　处：《人工晶体学报》2016年第11期2591-2595,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61306084;61464007);江苏省能量转换材料与技术重点实验室开放课题基金(NJ20160032);江西省重点研发计划-技术引进与合作研究-重点项目(2016BBH80043)

摘　　要：为进一步提高晶硅太阳能电池发射极的性能,本文提出了一种新的发射极制备技术-低温CVD法沉积固态薄膜扩散源并进行高温扩散。采用热丝化学气相沉积法(HWCVD)在单晶硅片上沉积重掺杂硅基薄膜作为固态扩散源,然后在空气氛围下的管式炉中进行高温扩散,最后用稀HF溶液去除表面的BSG/PSG。通过掺磷薄膜扩散在P型单晶硅片上制备了方阻在50~250Ω/□范围内可控的n+型发射极;通过掺硼薄膜扩散在N型硅片上制备了方阻在150~600Ω/□范围内可控的p+型发射极。并且通过在源气体中加入CO2作为氧源,实现了扩散后硅片表面残留扩散源层的彻底去除。A novel solid-phase diffusion method is mentioned in this paper to make the emitters of the crystalline silicon solar cells.The solid diffusion source films are heavily doped amorphous silicon-based films deposited by Hot Wire Chemical-vapor Deposition（HWCVD） at low substrate temperature.The films are doped by B2H6 for p-type and PH3 for n-type.After the films deposition,the wafers are thermaltreated in a tube furnace at air atmosphere.The Borosilicate glass（BSG） and Phosphorus silicon glass（PSG） are removed by diluted HF solution.With phosphorous source diffusion,the sheet resistance of n^＋emitter in the range of 50-250 Ω/□ is achieved on p-type monocrystalline silicon wafer.The sheet resistance of p^＋emitter in the range of 150-600 Ω/□ is achieved on n-type monocrystalline silicon.CO2 as oxygen source added to the precursor gases during the deposition process by HWCVD is succeeded to thoroughly remove the source layer after diffusion.

关 键 词：HWCVD 晶硅太阳电池 固态扩散源 发射极 方阻 

分 类 号：TN305[电子电信—物理电子学]