基于倒装应用的单刀双掷开关MMIC设计  

Design of the SPDT MMIC for the Flip-Chip Application

作　　者：高显[1] 何庆国[1] 白银超[1] 王凯[1] Gao Xian He Qingguo Bai Yinchao Wang Kai(The 13th Research Institute, CETC , Shijiazhuang 050051, China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2016年第12期899-905,958,共8页Semiconductor Technology

摘　　要：基于GaAs PHEMT ED25B与薄膜工艺设计了基于倒装应用的DC^26 GHz的单刀双掷(SPDT)开关。首先对倒装芯片与传统的正装芯片进行比较,倒装芯片MMIC技术具有明显的优势;然后对比了不同倒装情况对芯片性能的影响进而提出对倒装无源元器件和GaAs PHEMT开关建模的概念,利用建模软件提取了相应的模型;对倒装单刀双掷开关MMIC的设计进行了详细阐述;对制备的倒装单刀双掷开关MMIC进行测试。测试结果表明,回波损耗大于15 d B,插损小于2.8 d B,隔离度大于28 d B。最后对芯片进行温度循环试验和恒定加速度试验,验证了这款基于倒装应用的单刀双掷开关MMIC的可靠性。A single-pole double-throw（ SPDT） switch of DC- 26 GHz based on the Ga As PHEMT ED25 B and thin-film technology was designed. Firsly,compared with the flip-chip and the faced-up,and the flip-chip MMIC techndogy has significant advantages. Then effects of different flip-chip structures on the performance of chip were compared,the concept of modeling the flip-chip passive devices and Ga As PHEMT switches was put forward with the help of the modeling software. The design of the flip-chip SPDT MMIC was detailedly described,and the flip-chip SPDT switch MMIC was tested. The test results show that the return loss is above 15 d B,the insert loss is less than 2. 8 d B and the isolation is above 28 d B. At last,the chip was tested by the cracking in temperature circulating test and constant acceleration test,the reliability of the flip-chip SPDT switch MMIC was proved.

关 键 词：倒装芯片 单刀双掷(SPDT)开关 GaAs PHEMT开关建模 倒装互连结构 

分 类 号：TN43[电子电信—微电子学与固体电子学] TN631