发射区底切对倒置结构InP/GaAsSb/InP DHBT性能的影响  

Effect of Undercut-Emitter on the Performance of Collector-Up InP/GaAsSb/InP DHBTs

作　　者：顾磊 熊德平[2] 周守利[3] 彭银生[3] Gu Lei Xiong Deping Zhou Shouli Peng Yinsheng(Hangzhou Xiaoshan Technician College, Hangzhou 311201, China School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China College of Information Engineering, Zhejiang University of Technology, Hangzhou 310023, China)

机构地区：[1]杭州萧山技师学院,杭州311201 [2]广东工业大学物理与光电工程学院,广州510006 [3]浙江工业大学信息工程学院,杭州310023

出　　处：《半导体技术》2016年第12期913-917,共5页Semiconductor Technology

基　　金：广东省科技计划资助项目(2015B010112002);广州市科技计划资助项目(2016201604030035)

摘　　要：基于考虑载流子弹道输运等非局域传输瞬态效应的流体动力学模型,数值模拟计算了集电区在上面发射区在下面的倒置InP/GaAsSb/InP双异质结双极晶体管(DHBT)器件的直流输出特性和高频性能。计算结果表明:由于集电区台面面积小,集电区在上的倒置InP/GaAsSb/InP双异质结双极晶体管有较高的高频性能;对于发射区在下面与基区接触面积大导致较多的基区载流子复合而使器件的增益偏低问题,可以考虑掩埋侧边腐蚀工艺底切发射区的技术来减少发射区和基区的接触面积,从而减少复合改善器件的增益特性。Based on the hydrodynamics model with nonlocal transient effect such as carriers ballistic transport,the DC output characteristic and high-frequency performance of an InP/GaAsSb/InP double heterojunction bipolar transistor（ DHBT） with collector-up, emitter-down were numerical simulated.The calculated conclusion show that the collector-up invert InP/GaAsSb/InP DHBT has high frequency response because of smaller collector mesa. The larger contact area between emitter and base for the collector-up InP/GaAsSb/InP DHBT leads more carriers recombination in the base to degrade the gain,which can be improved by using buried undercut emitter side-etching processes to reduce the contact area between emitter and base.

关 键 词：InP/GaAsSb 倒置DHBT 流体动力学模型 底切发射区 电流阻塞效应 

分 类 号：TN325.3[电子电信—物理电子学]